Influence of High-Pressure Annealing on Memory Properties of Hf0.5Zr0.5O2 Based 1T-FeRAM

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We investigated the impact of high-pressure annealing (HPA) on thememory properties of one-transistor dynamic random-access memory (1TDRAM) using a coupled geometry of a metal-ferroelectric (Hf0.5Zr0.5O2)-metal (MFM) capacitor connected in series with a gate insulator (SiO2) of a metal-oxide semiconductor field-effect transistor. The MFM capacitors were fabricated under different HPA conditions followed by the measurement of ferroelectric characteristics. The obtained results (polarization-electric field curves) were used for extracting the Landau-Khalatnikov coefficients, and these were used with the help of using Sentaurus TCAD tool, to theoretically study various characteristics of the coupled system (1TDRAM), such as sub-threshold swing (SS), memory window (MW), and ON/OFF current ratio (I-ON/I-OFF). The output reflected that the MFM associated with 550 degrees C HPA provides a wide MW (1.8-2.4 V based on area ratio), and the lowest SS (33mV/decade). Thus, the optimized HPA condition is promising in providing better results for various memory-based applications.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2019-07
Language
English
Article Type
Article
Citation

IEEE ELECTRON DEVICE LETTERS, v.40, no.7, pp.1076 - 1079

ISSN
0741-3106
DOI
10.1109/LED.2019.2918797
URI
http://hdl.handle.net/10203/263737
Appears in Collection
EE-Journal Papers(저널논문)
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