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Browse "EE-Journal Papers(저널논문)" by Author Yoon, HS

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Showing results 1 to 14 of 14

1	0.15 mu m T-shaped gate pseudomorphic HEMT fabricated using a new optical lithographic technique Park, BS; Lee, JH; Yoon, HS; Yang, JW; Park, Chul Soon; Pyun, KE, ELECTRONICS LETTERS, v.32, no.24, pp.2270 - 2271, 1996-11
2	A new optical lithographic technique using phase shifting mask with concurrent development and planarization for the formation of 0.15 mu m T shaped gate Park, BS; Lee, JH; Yoon, HS; Yang, JW; Park, Chul Soon; Pyun, KE; Kim, IK, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.30, pp.S217 - S220, 1997-06
3	Characteristics of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with wide head T-shaped gate fabricated by optimized dose split E-beam lithography Lee, JH; Yoon, HS; Choi, SS; Park, Chul Soon; Pyun, KE; Park, HM, COMPOUND SEMICONDUCTORS 1995, v.145, pp.809 - 812, 1996-01
4	Fabrication and characteristics of 0.2-mu m Al0.24Ga0.76As/In0.15Ga0.85As/GaAs pseudomorphic HEMTs with wide-head T-shaped multifinger gates Yoon, HS; Lee, JH; Choi, SS; Park, Chul Soon; Pyun, KE; Park, HM, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.29, no.2, pp.234 - 238, 1996-03
5	Fabrication and Characteristics of Extremely Low-Noise AlGaAs/InGaAs/GaAs Pseudomorphic HEMTs Yoon, HS; Lee, JH; Park, BS; Yun, CE; Park, Chul Soon, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.33, no.6, pp.741 - 744, 1998-12
6	Fabrication of a 0.1-mu m T-shaped gate with wide head for super low noise HEMTs Choi, SS; Lee, JH; Yoon, HS; Chung, HB; Lee, SY; Yoo, Hyung Joun, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.28, no.6, pp.768 - 772, 1995-12
7	High breakdown voltage P-HEMT using single gate lithography and two-step gate recess process Yoon, HS; Lee, JH; Park, BS; Lee, CW; Park, Chul Soon, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.34, pp.478 - 481, 1999-06
8	Low-noise AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor recessed by electron cyclotron resonance plasma etching Lee, JH; Choi, HT; Lee, CW; Yoon, HS; Park, BS; Park, Chul Soon, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.34, no.2, pp.150 - 153, 1999-02
9	Pseudomorphic AlGaAs/InGaAs/GaAs High Electron Mobility Transistors with Super Low Noise Performances of 0.41 dB at 18 GHz Lee, JH; Yoon, HS; Park, BS; Park, Chul Soon; Choi, SS; Pyun, KE, ETRI JOURNAL, v.18, no.3, pp.171 - 179, 1996-10
10	Room temperature photoluminescence studies of delta-doped pseudomorphic high electron mobility transistor AlGaAs/InGaAs/GaAs structures Lu, W; Lee, JH; Yoon, HS; Park, Chul Soon; Pyun, KE; Lee, HG; Suh, KS; et al, SOLID STATE COMMUNICATIONS, v.99, no.10, pp.713 - 716, 1996-09
11	STRUCTURE AND ELECTRICAL-RESISTIVITY OF LOW-PRESSURE CHEMICAL VAPOR-DEPOSITED SILICON Yoon, HS; Park, Chul Soon; Park, SC, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, v.4, no.6, pp.3095 - 3100, 1986-11
12	Text-independent speaker identification using soft channel selection in home robot environments Ji, M; Kim, S; Kim, HoiRin; Yoon, HS, IEEE TRANSACTIONS ON CONSUMER ELECTRONICS, v.54, no.1, pp.140 - 144, 2008-02
13	The realization and analysis of pattern/polarization diversity in multiple input multiple output array Chae, SH; Yoon, HS; Park, SeongOok, MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, v.50, pp.561 - 566, 2008-03
14	ULTRA-LOW NOISE CHARACTERISTICS OF ALGAAS/INGAAS/GAAS PSEUDOMORPHIC HEMTS WITH WIDE HEAD T-SHAPED GATE Lee, JH; Yoon, HS; Park, Chul Soon; Park, HM, IEEE ELECTRON DEVICE LETTERS, v.16, no.6, pp.271 - 273, 1995-06

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