Browse "EE-Journal Papers(저널논문)" by Author Wang, Dong-Hyun

Showing results 1 to 5 of 5

1
High-Pressure Deuterium Annealing for Trap Passivation for a 3-D Integrated Structure

Lee, Jung-Woo; Han, Joon-Kyu; Wang, Dong-Hyun; Yun, Seong-Yun; Oh, Jeong-Seob; Bang, Byeong-Chan; Cha, Won-Hyo; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.71, no.4, pp.2801 - 2804, 2024-04

2
Improved SOI FinFETs Performance with Low-Temperature Deuterium Annealing

Ku, Ja-Yun; Yu, Ji-Man; Wang, Dong-Hyun; Jung, Dae-Han; Han, Joon-Kyu; Choi, Yang-Kyu; Park, Jun-Young, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.70, no.7, pp.3958 - 3962, 2023-07

3
Low-Temperature Deuterium Annealing to Improve Performance and Reliability in a MOSFET

Yu, Ji-Man; Wang, Dong-Hyun; Ku, Ja-Yun; Han, Joon-Kyu; Jung, Dae-Han; Park, Jun-Young; Choi, Yang-Kyu, SOLID-STATE ELECTRONICS, v.197, 2022-11

4
Lowering of Schottky Barrier Height in a MOSFET by Deuterium Annealing

Yu, Jiman; Wang, Dong-Hyun; Han, Joon-Kyu; Yun, Seong-Yun; Park, Jun-Young; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.44, no.7, pp.1032 - 1035, 2023-07

5
Physically Unclonable Function With a Rough Silicon Channel MOSFET

Jung, Dae-Han; Yu, Ji-Man; Ku, Ja-Yun; Yoon, Sung-Su; Kim, Jae-Hun; Han, Joon-Kyu; Kil, Tae-Hyun; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.71, no.1, pp.425 - 430, 2024-01

Discover

Type

Open Access

Date issued

. next

Subject

. next

rss_1.0 rss_2.0 atom_1.0