Showing results 1 to 5 of 5
High-Pressure Deuterium Annealing for Trap Passivation for a 3-D Integrated Structure Lee, Jung-Woo; Han, Joon-Kyu; Wang, Dong-Hyun; Yun, Seong-Yun; Oh, Jeong-Seob; Bang, Byeong-Chan; Cha, Won-Hyo; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.71, no.4, pp.2801 - 2804, 2024-04 |
Improved SOI FinFETs Performance with Low-Temperature Deuterium Annealing Ku, Ja-Yun; Yu, Ji-Man; Wang, Dong-Hyun; Jung, Dae-Han; Han, Joon-Kyu; Choi, Yang-Kyu; Park, Jun-Young, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.70, no.7, pp.3958 - 3962, 2023-07 |
Low-Temperature Deuterium Annealing to Improve Performance and Reliability in a MOSFET Yu, Ji-Man; Wang, Dong-Hyun; Ku, Ja-Yun; Han, Joon-Kyu; Jung, Dae-Han; Park, Jun-Young; Choi, Yang-Kyu, SOLID-STATE ELECTRONICS, v.197, 2022-11 |
Lowering of Schottky Barrier Height in a MOSFET by Deuterium Annealing Yu, Jiman; Wang, Dong-Hyun; Han, Joon-Kyu; Yun, Seong-Yun; Park, Jun-Young; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.44, no.7, pp.1032 - 1035, 2023-07 |
Physically Unclonable Function With a Rough Silicon Channel MOSFET Jung, Dae-Han; Yu, Ji-Man; Ku, Ja-Yun; Yoon, Sung-Su; Kim, Jae-Hun; Han, Joon-Kyu; Kil, Tae-Hyun; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.71, no.1, pp.425 - 430, 2024-01 |
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