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Analysis of Fluorine Effects on Charge-Trap Flash Memory of W/TiN/Al2O3/Si3N4/SiO2/Poly-Si Gate Stack Lee, Tae Yoon; Lee, Seung Hwan; Son, Jun Woo; Lee, Sang Jae; Bong, Jae Hoon; Shin, Eui Joong; Kim, Sung Ho; et al, SOLID-STATE ELECTRONICS, v.164, pp.107713, 2020-02 |
Effect of ZrO2 interfacial layer on forming ferroelectric HfxZryOz on Si substrate Lee, Sang Jae; Kim, Min Ju; Lee, Tae Yoon; Lee, Tae In; Bong, Jae Hoon; Shin, Sung Won; Kim, Seongho; et al, AIP ADVANCES, v.9, no.12, 2019-12 |
Fluorine Effects Originating from the CVD W Process on Charge-Trap Flash Memory Cells Moon, Jung Min; Lee, Tae Yoon; Ahn, Hyunjun; Lee, Tae In; Hwang, Wan Sik; Cho, Byung-Jin, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.66, no.1, pp.378 - 382, 2019-01 |
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