Browse "EE-Journal Papers(저널논문)" by Author Kim, Taeho
Showing results 1 to 33 of 33
| A 0.87 W Transceiver IC for 100 Gigabit Ethernet in 40 nm CMOS Won, Hyosup; Yoon, Taehun; Han, Jinho; Lee, Joon-Yeong; Yoon, Jong-Hyeok; Kim, Taeho; Lee, Jeong-Sup; et al, IEEE JOURNAL OF SOLID-STATE CIRCUITS, v.50, no.2, pp.399 - 413, 2015-02 |
| A 103.125-Gb/s Reverse Gearbox IC in 40-nm CMOS for Supporting Legacy 10-and 40-GbE Links Yoon, Taehun; Lee, Joon Yeong; Lee, Jinhee; Han, Kwangseok; Lee, Jeong-Sup; Lee, Sangeun; Kim, Taeho; et al, IEEE JOURNAL OF SOLID-STATE CIRCUITS, v.52, no.3, pp.688 - 703, 2017-03 |
| A Power-and-Area Efficient 10 x 10 Gb/s Bootstrap Transceiver in 40 nm CMOS for Referenceless and Lane-Independent Operation Lee, Joon Yeong; Han, Kwangseok; Yoon, Taehun; Kim, Taeho; Lee, Sang-Eun; Lee, Jeong-Sup; Park, Jinho; et al, IEEE JOURNAL OF SOLID-STATE CIRCUITS, v.51, no.10, pp.2475 - 2484, 2016-10 |
| An Automatic Loop Gain Control Algorithm for Bang-Bang CDRs Kwon, Soon Won; Lee, Joon Yeong; Lee, Jinhee; Han, Kwangseok; Kim, Taeho; Lee, Sangeun; Lee, Jeong Sup; et al, IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, v.62, no.12, pp.2817 - 2828, 2015-12 |
| Ar plasma treated ZnON transistor for future thin film electronics Lee, Eunha; Kim, Taeho; Benayad, Anass; Kim, HeeGoo; Jeon, Sanghun; Park, Gyeong-Su, APPLIED PHYSICS LETTERS, v.107, no.12, 2015-09 |
| Beneficial effect of hydrogen in aluminum oxide deposited through the atomic layer deposition method on the electrical properties of an indium–gallium–zinc oxide thin-film transistor Nam, Yunyong; Kim, Hee-Ok; Cho, Sung Haeng; Hwang, Chi-Sun; Kim, Taeho; Jeon, Sanghun; Park, Sang-Hee Ko, Journal of Information Display, v.17, no.2, pp.65 - 71, 2016-04 |
| Defects and Charge-Trapping Mechanisms of Double-Active-Layer In-Zn-O and Al-Sn-Zn In-O Thin-Film Transistors Goh, Youngin; Kim, Taeho; Yang, Jong-Heon; Choi, Ji Hun; Hwang, Chi-Sun; Cho, Sung Haeng; Jeon, Sanghun, ACS APPLIED MATERIALS & INTERFACES, v.9, no.11, pp.9271 - 9279, 2017-03 |
| Determination of intrinsic mobility of a bilayer oxide thin-film transistor by pulsed I-V method Woo, Hyunsuk; Kim, Taeho; Hur, Jihyun; Jeon, Sanghun, NANOTECHNOLOGY, v.28, no.17, 2017-04 |
| Effect of Annealing Temperature on Minimum Domain Size of Ferroelectric Hafnia Yun, Seokjung; Kim, Hoon; Seo, Myungsoo; Kang, Min-Ho; Kim, Taeho; Cho, Seongwoo; Park, Ming Hyuk; et al, ACS APPLIED ELECTRONIC MATERIALS, v.6, no.4, pp.2134 - 2141, 2024-03 |
| Effect of Floating Gate Insertion on the Analog States of Ferroelectric Field-Effect Transistors Lee, Sangho; Lee, Youngkyu; Kim, Giuk; Kim, Taeho; Eom, Taehyong; Jung, Seong-Ook; Jeon, Sanghun, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.70, no.1, pp.349 - 353, 2023-01 |
| Effect of hydrogen on dynamic charge transport in amorphous oxide thin film transistors Kim, Taeho; Nam, Yunyong; Hur, Ji-Hyun; Park, Sang-Hee Ko; Jeon, Sanghun, NANOTECHNOLOGY, v.27, no.32, 2016-08 |
| Effects of high pressure nitrogen annealing on ferroelectric Hf0.5Zr0.5O2 films Kim, Taeho; Park, Jinsung; Cheong, Byoung-Ho; Jeon, Sanghun, APPLIED PHYSICS LETTERS, v.112, no.9, 2018-03 |
Evolution of crystallographic structure and ferroelectricity of Hf0.5Zr0.5O2 films with different deposition rate Kim, Taeho; An, Minho; Jeon, Sanghun, AIP ADVANCES, v.10, no.1, 2020-01 |
| Fast and slow transient charging of Oxide Semiconductor Transistors Kim, Taeho; Park, Sungho; Jeon, Sanghun, SCIENTIFIC REPORTS, v.7, 2017-09 |
| Fast transient charging behavior of HfInZnO thin-film transistor Kim, Taeho; Hur, Ji-Hyun; Jeon, Sanghun, APPLIED PHYSICS LETTERS, v.107, no.9, 2015-08 |
| HfZrOx-Based Ferroelectric Synapse Device With 32 Levels of Conductance States for Neuromorphic Applications Oh, Seungyeol; Kim, Taeho; Kwak, Myunghoon; Song, Jeonghwan; Woo, Jiyong; Jeon, Sanghun; Yoo, In Kyeong; et al, IEEE ELECTRON DEVICE LETTERS, v.38, no.6, pp.732 - 735, 2017-06 |
| High mobility and high stability glassy metal-oxynitride materials and devices Lee, Eunha; Kim, Taeho; Benayad, Anass; Hur, Jihyun; Park, Gyeong-Su; Jeon, Sanghun, SCIENTIFIC REPORTS, v.6, 2016-04 |
| High performance ferroelectric field-effect transistors for large memory-window, high-reliability, high-speed 3D vertical NAND flash memory Kim, Giuk; Lee, Sangho; Eom, Taehyong; Kim, Taeho; Jung, Minhyun; Shin, Hunbeom; Jeong, Yeongseok; et al, JOURNAL OF MATERIALS CHEMISTRY C, v.10, no.26, pp.9802 - 9812, 2022-07 |
| High-Performance and High-Endurance HfO2-Based Ferroelectric Field-Effect Transistor Memory with a Spherical Recess Channel Kim, Taeho; Hwang, Junghyeon; Kim, Giuk; Jung, Minhyun; Jeon, Sanghun, PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, v.15, no.5, 2021-05 |
| Hot Carrier Trapping Induced Negative Photoconductance in InAs Nanowires toward Novel Nonvolatile Memory Yang, Yiming; Peng, Xingyue; Kim, Hong-Seok; Kim, Taeho; Jeon, Sanghun; Kang, Hang Kyu; Choi, Wonjun; et al, NANO LETTERS, v.15, no.9, pp.5875 - 5882, 2015-09 |
| Influence of Fast Charging on Accuracy of Mobility in a-InHfZnO Thin-Film Transistor Kim, Taeho; Choi, Rino; Jeon, Sanghun, IEEE ELECTRON DEVICE LETTERS, v.38, no.2, pp.203 - 206, 2017-02 |
| Interfacial Dipole Modulation Device With SiOX Switching Species Kim, Giuk; Kim, Taeho; Jeon, Sanghun, IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, v.9, pp.57 - 60, 2021 |
| Novel Approach to High kappa (similar to 59) and Low EOT (similar to 3.8 angstrom) near the Morphotrophic Phase Boundary with AFE/FE (ZrO2/HZO) Bilayer Heterostructures and High-Pressure Annealing Gaddam, Venkateswarlu; Kim, Giuk; Kim, Taeho; Jung, Minhyun; Kim, Chaeheon; Jeon, Sanghun, ACS APPLIED MATERIALS & INTERFACES, v.14, no.38, pp.43463 - 43473, 2022-09 |
| Photoresponse of an oxide semiconductor photosensor Ahn, Seung-Eon; Park, Sungho; Kim, Taeho; Park, Junghak; Jeon, Sanghun, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.33, no.3, 2015-05 |
| Power-Delay Area-Efficient Processing-In-Memory Based on Nanocrystalline Hafnia Ferroelectric Field-Effect Transistors Kim, Giuk; Ko, Dong Han; Kim, Taeho; Lee, Sangho; Jung, Minhyun; Lee, Young Kyu; Lim, Sehee; et al, ACS APPLIED MATERIALS & INTERFACES, v.15, no.1, pp.1463 - 1474, 2023-01 |
| Pulse I-V characterization of a nanocrystalline oxide device with sub-gap density of states Kim, Taeho; Hur, Ji-Hyun; Jeon, Sanghun, NANOTECHNOLOGY, v.27, no.21, 2016-05 |
| Pulse Switching Study on the HfZrO Ferroelectric Films With High Pressure Annealing Kim, Taeho; Jeon, Sanghun, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.65, no.5, pp.1771 - 1773, 2018-05 |
| Relatively Low-k Ferroelectric Nonvolatile Memory Using Fast Ramping Fast Cooling Annealing Process Hwang, Junghyeon; Kim, Minki; Jung, Minhyun; Kim, Taeho; Goh, Youngin; Lee, Yongsun; Jeon, Sanghun, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.69, no.6, pp.3439 - 3445, 2022-06 |
| Steep-Slope Transistor with an Imprinted Antiferroelectric Film Lee, Sangho; Lee, Yongsun; Kim, Taeho; Kim, Giuk; Eom, Taehyong; Shin, Hunbeom; Jeong, Yeongseok; et al, ACS APPLIED MATERIALS & INTERFACES, v.14, no.47, pp.53019 - 53026, 2022-11 |
| The Influence of Hydrogen on Defects of In-Ga-Zn-O Semiconductor Thin-Film Transistors With Atomic-Layer Deposition of Al2O3 Kim, Taeho; Nam, Yunyong; Hur, Jihyun; Park, Sang-Hee Ko; Jeon, Sanghun, IEEE ELECTRON DEVICE LETTERS, v.37, no.9, pp.1131 - 1134, 2016-09 |
| The influence of interfacial defects on fast charge trapping in nanocrystalline oxide-semiconductor thin film transistors Kim, Taeho; Hur, Jihyun; Jeon, Sanghun, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.31, no.5, 2016-05 |
| The Opportunity of Negative Capacitance Behavior in Flash Memory for High-Density and Energy-Efficient In-Memory Computing Applications Kim, Taeho; Kim, Giuk; Lee, Young Kyu; Ko, Dong Han; Hwang, Junghyeon; Lee, Sangho; Shin, Hunbeom; et al, ADVANCED FUNCTIONAL MATERIALS, v.33, no.7, 2023-02 |
| Vertical-Pillar Ferroelectric Field-Effect-Transistor Memory Lee, Sangho; Kim, Giuk; Kim, Taeho; Eom, Taehyong; Jeon, Sanghun, PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, v.16, no.10, 2022-10 |
Discover
Open Access
- 573 OA Article
Date issued
- 1,908 2020 - 2024
- 5,085 2010 - 2019
- 4,213 2000 - 2009
- 2,379 1990 - 1999
- 665 1980 - 1989