Browse "EE-Journal Papers(저널논문)" by Author Joo, MS
Showing results 1 to 16 of 16
| A comparison between leakage currents in thin gate oxides subjected to X-ray radiation and electrical stress degradation Cho, Byung Jin; Kim, SJ; Ling, CH; Joo, MS; Yeo, IS, SOLID-STATE ELECTRONICS, v.44, no.7, pp.1289 - 1292, 2000-07 |
| Channel mobility degradation and charge trapping in high-k/metal gate NMOSFETs Mathew, S; Bera, LK; Balasubramanian, N; Joo, MS; Cho, Byung Jin, THIN SOLID FILMS, v.462, pp.11 - 14, 2004-09 |
| Charge trapping and breakdown mechanism in HfAIO/TaN gate stack analyzed using carrier separation Loh, WY; Cho, Byung Jin; Joo, MS; Li, MF; Chan, DSH; Mathew, S; Kwong, DL, IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, v.4, no.4, pp.696 - 703, 2004-12 |
| Does short wavelength lithography process degrade the integrity of thin gate oxide? Kim, SJ; Cho, Byung Jin; Chong, PF; Chor, EF; Ang, CH; Ling, CH; Joo, MS; et al, MICROELECTRONICS RELIABILITY, v.40, pp.1609 - 1613, 2000-10 |
| Effect of annealing on the composition and structure of HfO2 and nitrogen-incorporated HfO2 Yeo, CC; Joo, MS; Cho, Byung Jin; Whang, SJ, THIN SOLID FILMS, v.462, pp.90 - 95, 2004-09 |
| Electron-beam irradiation-induced gate oxide degradation Cho, Byung Jin; Chong, PF; Chor, EF; Joo, MS; Yeo, IS, JOURNAL OF APPLIED PHYSICS, v.88, no.11, pp.6731 - 6735, 2000-12 |
| Energy gap and band alignment for (HfO2)(x)(Al2O3)(1-x) on (100) Si Yu, HY; Li, MF; Cho, Byung Jin; Yeo, CC; Joo, MS; Kwong, DL; Pan, JS; et al, APPLIED PHYSICS LETTERS, v.81, no.2, pp.376 - 378, 2002-07 |
| Formation of hafnium-aluminum-oxide gate dielectric using single cocktail liquid source in MOCVD process Joo, MS; Cho, Byung Jin; Yeo, CC; Chan, DSH; Whoang, SJ; Mathew, S; Bera, LK; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.50, no.10, pp.2088 - 2094, 2003-10 |
| Hafnium aluminum oxide as charge storage and blocking-oxide layers in SONOS-type nonvolatile memory for high-speed operation Tan, YN; Chim, WK; Choi, WK; Joo, MS; Cho, Byung Jin, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.53, no.4, pp.654 - 662, 2006-04 |
| Improvement of electrical properties of MOCVD HfO2 by multistep deposition Yeo, CC; Cho, Byung Jin; Joo, MS; Whoang, SJ; Kwong, DL; Bera, LK; Mathew, S; et al, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.6, no.11, pp.F42 - F44, 2003-11 |
| Interface configuration and Fermi-level pinning of fully silicided gate and high-K dielectric stack Joo, MS; Park, CS; Cho, Byung Jin; Balasubramanian, N; Kwong, DL, JOURNAL OF VACUUM SCIENCE TECHNOLOGY B, v.24, no.3, pp.1341 - 1343, 2006-05 |
| Investigation of reliability degradation of ultra-thin gate oxides irradiated under electron-beam lithography conditions Chong, PF; Cho, Byung Jin; Chor, EF; Joo, MS; Yeo, IS, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.39, no.4B, pp.2181 - 2185, 2000-04 |
| Reliability of thin gate oxides irradiated under X-ray lithography conditions Cho, Byung Jin; Kim, SJ; Ang, CH; Ling, CH; Joo, MS; Yeo, IS, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.40, no.4B, pp.2819 - 2822, 2001-04 |
| Stoichiometry dependence of fermi-level pinning in fully silicided (FUSI) NiSi gate on high-K dielectric Joo, MS; Cho, Byung Jin; Balasubramanian, N; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.26, no.12, pp.882 - 884, 2005-12 |
| Thermal instability of effective work function in metal/high-kappa stack and its material dependence Joo, MS; Cho, Byung Jin; Balasubramanian, N; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.25, no.11, pp.716 - 718, 2004-11 |
| Wet etching characteristics and surface morphology evaluation of MOCVD grown HfO2 film Balasubramanian, M; Bera, LK; Mathew, S; Balasubramanian, N; Lim, V; Joo, MS; Cho, Byung Jin, THIN SOLID FILMS, v.462, no.SI, pp.101 - 105, 2004-09 |
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