Browse "EE-Journal Papers(저널논문)" by Author Jeong, Jaeyong
Showing results 1 to 10 of 10
| 200-mm Si CMOS Process-Compatible Integrated Passive Device Stack for Millimeter-Wave Monolithic 3-D Integration Park, Minsik; Song, Jonghyun; Jeong, Jaeyong; Lim, Jeong-Taek; Song, Jae-Hyeok; Lee, Won-Chul; Sim, Gapseop; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.70, no.10, pp.5257 - 5264, 2023-10 |
| Effects of Back Metal on the DC and RF Characteristics of 3D Stacked InGaAs RF Device for Monolithic 3D RF Applications Jeong, Jaeyong; Kim, Seong Kwang; Kim, Jongmin; Geum, Dae-Myeong; Kim, Sanghyeon, IEEE ELECTRON DEVICE LETTERS, v.44, no.4, pp.598 - 601, 2023-04 |
| Electrical Analysis for Wafer-Bonded Interfaces of p(+)GaAs/n(+)InGaAs and p(+)InGaAs/n(+)InGaAs Geum, Dae-Myeong; Kim, Seong Kwang; Lim, Hyeong-Rak; Park, Juhyuk; Jeong, Jaeyong; Han, Jae Hoon; Choi, Won Jun; et al, IEEE ELECTRON DEVICE LETTERS, v.42, no.6, pp.800 - 803, 2021-06 |
| Heterogeneous 3-D Sequential CFETs With Ge (110) Nanosheet p-FETs on Si (100) Bulk n-FETs Kim, Seong Kwang; Lim, Hyeong-Rak; Jeong, Jaejoong; Lee, Seung Woo; Jeong, Ho Jin; Park, Juhyuk; Kim, Joon Pyo; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.71, no.1, pp.393 - 399, 2024-01 |
| Heterogeneous and Monolithic 3D Integration of III-V-Based Radio Frequency Devices on Si CMOS Circuits Jeong, Jaeyong; Kim, Seong Kwang; Kim, Jongmin; Geum, Dae-Myeong; Kim, Duckhyun; Jo, Eunju; Jeong, Hakcheon; et al, ACS NANO, v.16, no.6, pp.9031 - 9040, 2022-06 |
| Heterogeneous and Monolithic 3D Integration Technology for Mixed-Signal ICs Jeong, Jaeyong; Geum, Dae-Myeong; Kim, SangHyeon, ELECTRONICS, v.11, no.19, 2022-10 |
| Large Polarization of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>x</sub> Ferroelectric Film on InGaAs With Electric-Field Cycling and Annealing Temperature Engineering Suh, Yoonje; Jeong, Jaeyong; Kim, Bong Ho; Kuk, Songhyeon; Kim, Seongkwang; Kim, Joon Pyo; Kim, Sanghyeon, IEEE ELECTRON DEVICE LETTERS, v.45, no.5, pp.766 - 769, 2024-05 |
| Low Operating Voltage and Immediate Read-After-Write of HZO-Based Si Ferroelectric Field-Effect Transistors with High Endurance and Retention Characteristics Kim, Bong Ho; Kuk, Song-Hyeon; Kim, Seong Kwang; Kim, Joon Pyo; Suh, Yoon-Je; Jeong, Jaeyong; Lee, Chan Jik; et al, ADVANCED ELECTRONIC MATERIALS, v.10, no.1, 2024-01 |
| Oxygen Scavenging in HfZrOx-Based n/p-FeFETs for Switching Voltage Scaling and Endurance/Retention Improvement Kim, Bong Ho; Kuk, Song-Hyeon; Kim, Seong Kwang; Kim, Joon Pyo; Suh, Yoon-Je; Jeong, Jaeyong; Geum, Dae-Myeong; et al, ADVANCED ELECTRONIC MATERIALS, v.9, no.5, 2023-05 |
| Stackable InGaAs-on-Insulator HEMTs for Monolithic 3-D Integration Jeong, Jaeyong; Kim, Seong Kwang; Kim, Jongmin; Geum, Dae-Myeong; Park, Juyeong; Jang, Jae-Hyung; Kim, Sanghyeon, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.68, no.5, pp.2205 - 2211, 2021-05 |
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