Browse "EE-Journal Papers(저널논문)" by Author HADDAD, GI
Showing results 1 to 7 of 7
| 16-GHZ BANDWIDTH INALAS-INGAAS MONOLITHICALLY INTEGRATED P-I-N/HBT PHOTORECEIVER GUTIERREZAITKEN, AL; Yang, Kyounghoon; ZHANG, X; HADDAD, GI; BHATTACHARYA, P; LUNARDI, LM, IEEE PHOTONICS TECHNOLOGY LETTERS, v.7, no.11, pp.1339 - 1341, 1995-11 |
| A SELF-CONSISTENT MODEL OF GAMMA-X MIXING IN GAAS/ALAS/GAAS QUANTUM-WELL STRUCTURES USING THE QUANTUM TRANSMITTING BOUNDARY METHOD SUN, JP; MAINS, RK; Yang, Kyounghoon; HADDAD, GI, JOURNAL OF APPLIED PHYSICS, v.74, no.8, pp.5053 - 5060, 1993-10 |
| BUILT-IN BIAXIAL STRAIN DEPENDENCE OF GAMMA-X TRANSPORT IN GAAS/INXAL1-XAS/GAAS PSEUDOMORPHIC HETEROJUNCTION BARRIERS (X=0, 0.03, AND 0.06) Yang, Kyounghoon; EAST, JR; HADDAD, GI; DRUMMOND, TJ; BRENNAN, TM; HAMMONS, BE, JOURNAL OF APPLIED PHYSICS, v.76, no.12, pp.7907 - 7914, 1994-12 |
| NEGATIVE DIFFERENTIAL RESISTANCE OF GAAS/ALXGA1-XAS MULTIQUANTUM WELL STRUCTURES UNDER HIGH-POWER PHOTOEXCITATION - STRUCTURE OPTIMIZATION FOR AN OSCILLATOR GOSWAMI, S; DAVIS, L; Hong, Songcheol; SINGH, J; BHATTACHARYA, PK; HADDAD, GI, ELECTRONICS LETTERS, v.28, no.10, pp.915 - 916, 1992-05 |
| NUMERICAL MODELING OF ABRUPT HETEROJUNCTIONS USING A THERMIONIC-FIELD EMISSION BOUNDARY-CONDITION Yang, Kyounghoon; EAST, JR; HADDAD, GI, SOLID-STATE ELECTRONICS, v.36, no.3, pp.321 - 330, 1993-03 |
| NUMERICAL STUDY ON THE INJECTION PERFORMANCE OF ALGAAS GAAS ABRUPT EMITTER HETEROJUNCTION BIPOLAR-TRANSISTORS Yang, Kyounghoon; EAST, JR; HADDAD, GI, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.41, no.2, pp.138 - 147, 1994-02 |
| THEORETICAL AND EXPERIMENTAL DC CHARACTERIZATION OF INGAAS-BASED ABRUPT EMITTER HBTS Yang, Kyounghoon; COWLES, JC; EAST, JR; HADDAD, GI, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.42, no.6, pp.1047 - 1058, 1995-06 |
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