Browse "EE-Journal Papers(저널논문)" by Author Eom, Taehyong
Showing results 1 to 5 of 5
| Effect of Floating Gate Insertion on the Analog States of Ferroelectric Field-Effect Transistors Lee, Sangho; Lee, Youngkyu; Kim, Giuk; Kim, Taeho; Eom, Taehyong; Jung, Seong-Ook; Jeon, Sanghun, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.70, no.1, pp.349 - 353, 2023-01 |
| High performance ferroelectric field-effect transistors for large memory-window, high-reliability, high-speed 3D vertical NAND flash memory Kim, Giuk; Lee, Sangho; Eom, Taehyong; Kim, Taeho; Jung, Minhyun; Shin, Hunbeom; Jeong, Yeongseok; et al, JOURNAL OF MATERIALS CHEMISTRY C, v.10, no.26, pp.9802 - 9812, 2022-07 |
| Power-Delay Area-Efficient Processing-In-Memory Based on Nanocrystalline Hafnia Ferroelectric Field-Effect Transistors Kim, Giuk; Ko, Dong Han; Kim, Taeho; Lee, Sangho; Jung, Minhyun; Lee, Young Kyu; Lim, Sehee; et al, ACS APPLIED MATERIALS & INTERFACES, v.15, no.1, pp.1463 - 1474, 2023-01 |
| Steep-Slope Transistor with an Imprinted Antiferroelectric Film Lee, Sangho; Lee, Yongsun; Kim, Taeho; Kim, Giuk; Eom, Taehyong; Shin, Hunbeom; Jeong, Yeongseok; et al, ACS APPLIED MATERIALS & INTERFACES, v.14, no.47, pp.53019 - 53026, 2022-11 |
| Vertical-Pillar Ferroelectric Field-Effect-Transistor Memory Lee, Sangho; Kim, Giuk; Kim, Taeho; Eom, Taehyong; Jeon, Sanghun, PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, v.16, no.10, 2022-10 |
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