Showing results 3 to 11 of 11
Hydrogen annealing effect on DC and low-frequency noise characteristics in CMOS FinFETs Lee, JS; Choi, Yang-Kyu; Ha, DW; Balasubramanian, S; King, TJ; Bokor, J, IEEE ELECTRON DEVICE LETTERS, v.24, no.3, pp.186 - 188, 2003-03 |
Investigation of gate-induced drain leakage (GIDL) current in thin body devices: Single-gate ultra-thin body, symmetrical double-gate, and asymmetrical double-gate MOSFETs Choi, Yang-Kyu; Ha, D; King, TJ; Bokor, J, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.42, no.4B, pp.2073 - 2076, 2003-04 |
Low-frequency noise characteristics in p-channel FinFETs Lee, JS; Choi, Yang-Kyu; Ha, D; King, TJ; Bokor, J, IEEE ELECTRON DEVICE LETTERS, v.23, no.12, pp.722 - 724, 2002-12 |
Low-frequency noise characteristics of ultrathin body p-MOSFETs with molybdenum gate Lee, JS; Ha, DW; Choi, Yang-Kyu; King, TJ; Bokor, J, IEEE ELECTRON DEVICE LETTERS, v.24, no.1, pp.31 - 33, 2003-01 |
Moores law lives on - Ultra-thin body SOI and FinFET CMOS transistors look to continue Moores law for many years to come Chang, LL; Choi, Yang-Kyu; Kedzierski, J; Lindert, N; Xuan, PQ; Bokor, J; Hu, CM; et al, IEEE CIRCUITS DEVICES, v.19, no.1, pp.35 - 42, 2003-01 |
Sub-50 nm p-channel FinFET Huang, XJ; Lee, WC; Kuo, C; Hisamoto, D; Chang, LL; Kedzierski, J; Anderson, E; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.48, no.5, pp.880 - 886, 2001-05 |
Sub-60-nm quasi-planar FinFETs fabricated using a simplified process Lindert, N; Chang, LL; Choi, Yang-Kyu; Anderson, EH; Lee, WC; King, TJ; Bokor, J; et al, IEEE ELECTRON DEVICE LETTERS, v.22, no.10, pp.487 - 489, 2001-10 |
Sublithographic nanofabrication technology for nanocatalysts and DNA chips Choi, Yang-Kyu; Lee, JS; Zhu, J; Somorjai, GA; Lee, LP; Bokor, J, JOURNAL OF VACUUM SCIENCE TECHNOLOGY B, v.21, no.6, pp.2951 - 2955, 2003-11 |
Ultrathin-body SOI MOSFET for deep-sub-tenth micron era Choi, Yang-Kyu; Asano, K; Lindert, N; Subramanian, V; King, TJ; Bokor, J; Hu, CM, IEEE ELECTRON DEVICE LETTERS, v.21, no.5, pp.254 - 255, 2000-05 |
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