Showing results 7 to 17 of 17
Engineering MoSe2/MoS2 heterojunction traps in 2D transistors for multilevel memory, multiscale display, and synaptic functions Jeong, Yeonsu; Lee, Han Joo; Park, Junkyu; Lee, Sol; Jin, Hye-Jin; Park, Sam; Cho, Hyunmin; et al, NPJ 2D MATERIALS AND APPLICATIONS, v.6, no.1, 2022-03 |
Enhanced cathodoluminescence from ZnS based phosphors with self-assembled ZnO nano-structures Ahn, Sung Il; Lee, Seong Eui; Lee, Won Hee; Park, Shang Hyeun; Choi, Kyung Cheol, CHEMICAL PHYSICS LETTERS, v.493, no.1-3, pp.113 - 117, 2010-06 |
Extremely Large Gate Modulation in Vertical Graphene/WSe2 Heterojunction Barristor Based on a Novel Transport Mechanism Shim, Jaewoo; Kim, Hyo Seok; Shim, Yoon Su; Kang, Dong-Ho; Park, Hyung-Youl; Lee, Jaehyeong; Jeon, Jaeho; et al, ADVANCED MATERIALS, v.28, no.26, pp.5293 - +, 2016-07 |
Highly luminescent blue-emitting CdZnS/ZnS nanorods having electric-field-induced fluorescence switching properties Lee, Yong-Hee; Kim, Somang; Kim, Hyo Seok; Shin, Jeong Bin; Choi, Wonseok; Cho, Hyunjin; Kim, Kyungmok; et al, JOURNAL OF MATERIALS CHEMISTRY C, v.5, no.8, pp.2098 - 2106, 2017-02 |
Injection of carriers from a ZnO nanostructured shell to a ZnS based microsphere core Ahn, Sung Il; Lee, Seong Eui; Cho, Yong-Hoon; Kim, Gi Ryoung; Li, Song-Mei; Choi, Kyung Cheol; Lee, Won Hee, APPLIED PHYSICS LETTERS, v.95, no.2, 2009-07 |
Low-Power Nonvolatile Charge Storage Memory based on MoS2 and an Ultrathin Polymer Tunneling Dielectric Woo, Myung Hoon; Jang, Byung Chul; Choi, Junhwan; Lee, Khang June; Shin, Gwang Hyuk; Seong, Hyejeong; Im, Sung Gap; et al, ADVANCED FUNCTIONAL MATERIALS, v.27, no.43, pp.1703545, 2017-11 |
Plasmonic Excitations of 1D Metal-Dielectric Interfaces in 2D Systems: 1D Surface Plasmon Polaritons Mason, Daniel R.; Menabde, Sergey G.; Yu, Sunkyu; Park, Namkyoo, SCIENTIFIC REPORTS, v.4, 2014-04 |
Spontaneous heteroassembly of 2D semiconducting van der Waals materials in random solution phase Padmajan Sasikala, Suchithra; Kim, Sung Hyun; Park, Cheolmin; Kim, Dong-Ha; Jung, Hong Ju; Jung, Juhyung; Lee, Hojin; et al, MATERIALS TODAY, v.58, pp.18 - 29, 2022-09 |
Strained Si/SiGe channel with buried Si0.99C0.01 for improved drivability, gate stack integrity and noise performance Loh, WY; Zang, H; Oh, HJ; Choi, KJ; Nguyen, HS; Lo, GQ; Cho, Byung Jin, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.54, pp.3292 - 3298, 2007-12 |
Stretchable thin-film transistors with molybdenum disulfide channels and graphene electrodes Park, Ick Joon; Kim, Tae In; Kang, Sumin; Shim, Gi Woong; Woo, Youngjun; Kim, Taek-Soo; Choi, Sung-Yool, NANOSCALE, v.10, no.34, pp.16069 - 16078, 2018-09 |
Vertical-tunneling field-effect transistor based on MoTe2/MoS2 2D-2D heterojunction![]() Koo, Bondae; Shin, Gwang Hyuk; Park, Hamin; Kim, Hojin; Choi, Sung-Yool, JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.51, no.47, pp.475101, 2018-10 |
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