Browse "EE-Conference Papers(학술회의논문)" by Author Yeo, CC

Showing results 1 to 6 of 6

1
Electrical and physical properties of Si1-xGex/HfO2/Si MOS-capacitors

Cho, Byung Jin; Wu, N; Zhu, C; Balasubramanian, N; Yeo, CC; Joo, MS; Yu, HY, 2nd International Conference on Materials for Advanced Technologies, pp.535 - 535, 2003-12-11

2
Improving electrical properties of CVD HfO2 by multi-step deposition and annealing in a gate cluster tool

Cho, Byung Jin; Yeo, CC; Joo, MS; Whoang, SJ; Kwong, DL; Bera, LK; Mathew, S, International Conf. on Solid State Devices and Materials (SSDM), pp.0 - 0, 2003-09-19

3
Metal gate/high-K dielectric stack on Si cap/ultra-thin pure Ge epi/Si substrate

Cho, Byung Jin; Yeo, CC; Lee, MH; Liu, CW; Choi, KJ; Lee, TW, Proceedings on 2005 IEEE Conference on Electron Devices and Solid-State Circuits, pp.107 - 110, 2005-12-08

4
MOCVD HfAlxOy gate dielectrics deposited using single cocktail liquid source

Cho, Byung Jin; Joo, MS; Yeo, CC; Whoang, SJ; Matthew, S; Bera, LK; Balasubramanian, N, 2003 International Conf. on Solid State Devices and Materials (SSDM), pp.0 - 0, 2003-09-19

5
Physical and electrical properties of MOCVD HfAlxOy gate dielectric and their composition ratio dependence

Cho, Byung Jin; Joo, MS; Yeo, CC; Ching, YL; Loh, WY; Whoang, SJ; Mathew, S, International Conference on Materials for Advanced Technologies, pp.517 - 517, 2003-12-11

6
Study of pure Ge on Si substrate for nMOSFET with HfAlO as gate dielectric and its thermal stability

Cho, Byung Jin; Yeo, CC; Yeo, H; Gao, F; Lee, SJ; Yu, CY; Liu, CW, International Conference on Materials for Advanced Technologies, pp.13 - 13, 2005-07-03

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