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Browse "EE-Conference Papers(학술회의논문)" by Author Kwong, DL

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Showing results 1 to 18 of 18

1	A comparison study of high-density MIM capacitors with ALD HfO2-Al2O3 laminated, sandwiched and stacked dielectrics Cho, Byung Jin; Ding, SJ; Hu, H; Zhu, C; Kim, SJ; Li, MF; Chin, A; et al, Conference on Solid State and Integrated Circuit Technology (ICSICT), pp.0 - 0, 2004-10-18
2	A novel approach for integration of dual metal gate process using ultra thin aluminum nitride buffer layer Cho, Byung Jin; Park, CS; N. Balasubramanian, N; Kwong, DL, Symposium on VLSI Technology, pp.149 - 149, 2003-06-10
3	Analysis of charge trapping and breakdown mechanism in high-K dielectrics with metal gate electrode using carrier separation Cho, Byung Jin; Loh, WY; Joo, MS; Li, MF; Chan, DSH; Kwong, DL, International Electron Device Meeting (IEDM), pp.0 - 0, 2003-12-08
4	Behavior of Effective Work Function in Metal/High-K Gate Stack under High Temperature Process Cho, Byung Jin; Joo, MS; Chi, DZ; Balasubramanian, N; Kwong, DL, Conf. on Solid State Devices and Materials (SSDM), pp.0 - 0, 2004-09-14
5	Dual Metal Gate Process by Metal Substitution of Dopant-Free Polysilicon on High-K Dielectric Cho, Byung Jin; Park, CS; Hwang, WS; Loh, WY; Tang, LJ; Kwong, DL, Symposium on VLSI Technology, pp.48 - 49, 2005-06-14
6	Energy gap and band alignment of (HfO2)x(Al2O3)1-x on (100) Si by XPS Cho, Byung Jin; Yu, HY; Li, MF; Kwong, DL; Pan, JS; Ang, CH; Zheng, JZ, 2002 International Conf. on Solid State Devices and Materials (SSDM), pp.0 - 0, 2002-12-17
7	Engineering of Voltage Nonlinearity in High-K MIM Capacitor for Analog/Mixed-Signal ICs Cho, Byung Jin; Kim, SJ; Li, MF; Ding, SJ; Yu, MB; Zhu, C; Chin, A; et al, Symposium on VLSI Technology, pp.218 - 219, 2004-06-17
8	HfO2 and Lanthanide-doped HfO2 MIM capacitors for RF/Mixed IC applications Cho, Byung Jin; Kim, SJ; Li, MF; Zhu, C; Chin, A; Kwong, DL, Symposium on VLSI Technology, pp.77 - 77, 2003-06-10
9	High performance RF MOSFETs and passive devices on Si Cho, Byung Jin; Chin, A; Lai, CH; Lai, ZM; Lee, CF; Zhu, C; Li, MF; et al, 2004 Asia-Pacific Microwave Conference, pp.0 - 0, 2004-11-15
10	High quality Si1-xGex nanowire and its application to MOSFET integrated with HfO2/TaN/Ta gate stack Cho, Byung Jin; Yang, WF; Lee, SJ; Whang, SJ; Lim, SY; Kwong, DL, 2007 International Conference on Solid State Devices and Materials(SSDM), pp.0 - 0, 2007-09-18
11	Improving electrical properties of CVD HfO2 by multi-step deposition and annealing in a gate cluster tool Cho, Byung Jin; Yeo, CC; Joo, MS; Whoang, SJ; Kwong, DL; Bera, LK; Mathew, S, International Conf. on Solid State Devices and Materials (SSDM), pp.0 - 0, 2003-09-19
12	MIM capacitors with HfO2 and HfAlOx for Si RF and analog applications Cho, Byung Jin; Yu, X; Zhu, C; Hu, H; Chin, A; Li, MF; Kwong, DL, MRS Spring meeting, pp.0 - 0, 2003-04-21
13	New reliability issues of CMOS transistors with 1.3 nm gate oxide Cho, Byung Jin; Li, MF; Chen, G; Loh, WY; Kwong, DL, 7th International Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films, pp.0 - 0, 2003-04-28
14	Progressive breakdown statistics in ultra-thin silicon dioxides Cho, Byung Jin; Loh, WY; Li, MF; Chan, DSH; Ang, CH; Zhen, ZJ; Kwong, DL, 10th International Symp. on the Physical and Failure Analysis of Integrated Circuits (IPFA), pp.157 - 157, 2003-07-08
15	Role of Si in Fermil-level pinning phenomena in metal/high-K dielectric gate stack Cho, Byung Jin; Joo, MS; Balasubramanian, N; Kwong, DL, International Conference on Materials for Advanced Technologies, pp.40 - 40, 2005-07-03
16	Substituted Aluminum Metal Gate on high-K Dielectric for low work-function and Fermi-Level Pinning Free Cho, Byung Jin; Park, CS; Tang, LJ; Kwong, DL, International Electron Device Meeting (IEDM), pp.0 - 0, 2004-12-13
17	Synthesis and transistor performances of high quality single crystalline vapor-liquid-solid grown Si1-xGex nanowire Cho, Byung Jin; Whang, SJ; Lee, SJ; Yang, WF; Liew, YF; Kwong, DL, IEEE-Nanotech 2007, pp.0 - 0, 2007-08-02
18	Top-Surface Aluminized and Nitrided Hafnium Oxide Using Synthesis of Thin AlN and HfO2 Stacked Layer Cho, Byung Jin; Park, CS; Tang, LJ; Wang, W; Kwong, DL, Conf. on Solid State Devices and Materials (SSDM), pp.0 - 0, 2004-09-14

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