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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

Substituted Aluminum Metal Gate on high-K Dielectric for low work-function and Fermi-Level Pinning FreeSubstituted Aluminum Metal Gate on high-K Dielectric for low work-function and Fermi-Level Pinning Free

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Cho, Byung Jin researcher / Park, CS / Tang, LJ / Kwong, DL

Issue Date: 2004-12-13

Language: ENG

Citation: International Electron Device Meeting (IEDM), pp.0 - 0

URI: http://hdl.handle.net/10203/144195

Appears in Collection: EE-Conference Papers(학술회의논문)

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Substituted Aluminum Metal Gate on high-K Dielectric for low work-function and Fermi-Level Pinning FreeSubstituted Aluminum Metal Gate on high-K Dielectric for low work-function and Fermi-Level Pinning Free

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