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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

Substituted Aluminum Metal Gate on high-K Dielectric for low work-function and Fermi-Level Pinning FreeSubstituted Aluminum Metal Gate on high-K Dielectric for low work-function and Fermi-Level Pinning Free

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dc.contributor.authorCho, Byung Jin-
dc.contributor.authorPark, CS-
dc.contributor.authorTang, LJ-
dc.contributor.authorKwong, DL-
dc.date.accessioned2013-03-18T03:10:19Z-
dc.date.available2013-03-18T03:10:19Z-
dc.date.created2012-02-06-
dc.date.issued2004-12-13-
dc.identifier.citationInternational Electron Device Meeting (IEDM), v., no., pp.0 - 0-
dc.identifier.urihttp://hdl.handle.net/10203/144195-
dc.languageENG-
dc.titleSubstituted Aluminum Metal Gate on high-K Dielectric for low work-function and Fermi-Level Pinning Free-
dc.title.alternativeSubstituted Aluminum Metal Gate on high-K Dielectric for low work-function and Fermi-Level Pinning Free-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage0-
dc.citation.endingpage0-
dc.citation.publicationnameInternational Electron Device Meeting (IEDM)-
dc.identifier.conferencecountryUnited States-
dc.identifier.conferencecountryUnited States-
dc.contributor.localauthorCho, Byung Jin-
dc.contributor.nonIdAuthorPark, CS-
dc.contributor.nonIdAuthorTang, LJ-
dc.contributor.nonIdAuthorKwong, DL-
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EE-Conference Papers(학술회의논문)
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