Browse "EE-Conference Papers(학술회의논문)" by Author Kwon, Young Se

Showing results 1 to 60 of 111

1
A 1.12mW continuous healthcare monitor chip integrated on a planar fashionable circuit board

Kim, H.; Kim, Y.; Kwon, Young Se; Yoo, Hoi-Jun, 2008 IEEE International Solid State Circuits Conference, ISSCC, pp.150 - 151, 2008-02-03

2
A compact high power T/R module for X-band phased array radar applications using an anodized aluminum substrate

Yeo S.-K.; Kim C.H.; Ahn J.-H.; Chun J.-H.; Kwon, Young Se, European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies - 39th European Microwave Conference, EuMC 2009, pp.1365 - 1368, 2009-09-28

3
A Compact Long Cavity Laser Diode with a Single Longitudinal Mode

Kwon, Young Se, OECC `97, 1997

4
A frequency agile floating-patch MEMS antenna for 42 GHz applications

Cho Y.H.; Kahng S.-T.; Choi W.; Ha M.-L.; Pyo C.; Kwon, Young Se, 2005 IEEE Antennas and Propagation Society International Symposium and USNC/URSI Meeting, pp.512 - 515, 2005-07-03

5
A GaAs Junction-Gate FECFET for the Digital Integrated Circuits

Kwon, Young Se, International Conference on Solid State Device and Materials, 1992

6
A GaAs MESFET with very short channel length Fabricated by Selective MOCVD

Kwon, Young Se, International Conference on Solid State Device and Materials, 1991

7
A monolithically integrated InP-based HBT and p-i-n photodiode using new stack-shared layer scheme

Kwon, Young Se, EUMC 2003, 2003

8
A Multichip on Oxide of 1.25 Gbps 80 dBohm Fully Differential CMOS Transimpedance Amplifier for Optical Interconnect Applications

Kwon, Young Se, ISSCC 2002, pp.80 - 81, 2002

9
A New GaAs BiFET Structure Using Selective MOCVD Technique

Kwon, Young Se, International Symposium on Compound Semiconductors, 1995

10
A New GaAs FET with Deln-Delp dipole Barrier(DIB)

Kwon, Young Se; Hong, Songcheol; Cho, HR, International Conference on Solid State Device and Materials, 1993

11
A New High Radiance LED Structure with Circular 45 degree Corner Reflector

Kwon, Young Se, ICSSDM, 2000

12
A Novel Area-Variable Varactor Diode

Kwon, Young Se, International Symposium on Compound Semiconductors, pp.733 - 736, 1994

13
A Novel Fabrication Technology for Integrating FET'sand High Performance Diodes, and Its Application to MMIC VCO.

Kwon, Young Se, IEDM '96, 1996

14
A Vertical Integration of Laser Diode and Transistor

Kwon, Young Se, IEEE Region 10 conference, 1987

15
A Waveguide on the Oxidized Porous Silicon for the Robust Alignment in the Silicon Optical Bench

Kwon, Young Se, First International Sysposium on Integrated Optoelectronics(Electro-Chemical Society Meeting), Electro-Chemical Society, 2002-05

16
AlGaAs/GaAs HBT Fabricated using Selective MOCVD

Kwon, Young Se; Hong, Songcheol; Son, JH; Kim, CT, International Conference on Solid State Device and Materials, pp.610 - 612, 1994

17
AlGaAs/GaAs lens-shaped LED with high efficiency and narrow field pattern

Cho Gyu-Seog; Kwon, Young Se, Optoelectronic Component Technologies, v.1813, pp.142 - 153, 1992-12-16

18
An X-band high power amplifier module package using selectively anodized aluminum substrate

Yeo S.-K.; Chun J.-H.; Kim K.-M.; Yook J.-M.; Kwon, Young Se, European Microwave Week 2007, EuMW 2007 - 2nd European Microwave Integrated Circuits Conference, EuMIC 2007, pp.559 - 562, 2007-10-08

19
An X-band high power amplifier module package using selectively anodized aluminum substrate

Yeo S.-K.; Chun J.-H.; Kim K.-M.; Yook J.-M.; Kwon, Young Se, 37th European Microwave Conference, EUMC, pp.1357 - 1360, 2007-10-09

20
Balanced BPFs implemented using IPD (integrated passive devices) technology

Yook J.-M.; Yu J.-I.; Park J.-C.; Kwon, Young Se, 13th European Microwave Week 2010, EuMW2010: Connecting the World - 40th European Microwave Conference, EuMC 2010, pp.429 - 432, 2010-09-28

21
Bell-Shaped Light Emitting Diode Structure with 45 degree Corner Reflector, Deep Side Wall and Microlens

Kwon, Young Se, SPIE, 2002

22
Characteristics of AlGaN/GaN HEMT Devices with SiN Passivation

Kwon, Young Se, IEDM, 2000

23
Chemical Etching of InGaAsP/InP Using HBr-H3PO4-Cr2O7 and Its Applicationto Microlens array

Kwon, Young Se, International Conference on Indium Phosphide and Related Materials, 2000

24
Chip scale package for SAW filter on the oxidized porous silicon using flip-chip bonding and Cu plated metal wall

Ha M.-L.; Lee J.-S.; Kwon, Young Se, 52nd Electronic Components and Technology Conference, pp.372 - 377, Electronic Components and Technology Conference, 2002-05-28

25
Compact front end modules for WLAN applications with integrated passive devices using selectively anodized aluminum substrate

Yu J.-I.; Yook J.-M.; Park J.-C.; Kim C.-H.; Kwon, Young Se, 13th European Microwave Week 2010: Connecting the World, EuMIC 2010, pp.329 - 332, 123, 2010-09-26

26
Effects of Buffer Structures of InGaAs MESFETs.

Kwon, Young Se; Hong, Songcheol; Lee, JJ; Kim, DW; Lee, HG; Pyun, KE; Kwon, YS, International Symposium on Compound Semiconductors, 1995

27
Embedded IC technology for compact packaging inside aluminum substrate (pocket embedded Packaging)

Kim K.-M.; Yook J.-M.; Yeo S.-K.; Kwon, Young Se, European Microwave Week 2007, EuMW 2007 - 2nd European Microwave Integrated Circuits Conference, EuMIC 2007, pp.327 - 330, 123, 2007-10-08

28
Fabrication and analysis of high-Q inductor on anodized aluminum for high power package

Lee J.-H.; Shin S.-H.; Kim K.M.; Kwon, Young Se, 36th European Microwave Conference, EuMC 2006, pp.1387 - 1390, 2006-09-10

29
Fabrication and characterization of two-dimensional phased arrays of vertical cavity surface emitting lasers

Yoo, Hoi-Jun; Kwon, Young Se; Hayes, J.R.; Andreadakis, N.; Paek, E.G.; Chang, G.K.; Harbinson, J.P.; et al, IEEE/LEOS Annual Meeting, 1990

30
Fabrication of InGaAsP/InP Twin-guide Laser Diode with Rectangular Ring Cavity

Kwon, Young Se, ICSSDM, pp.604 - 605, 2001

31
Fabrication of integrated twin-guide corner reflector surface-emitting lasers with reactive ion-beam etching

Kwon, Young Se, ISCS, ISCS, 1997-09

32
Fabrication of monolithic VCO using selective-area MOCVD.

Kwon, Young Se, International Symposium on Compound Semiconductors, 1996

33
Fabrication of novel self-aligned InP/InGaAs HBT''s using dummy emitter

Kim, M; Jeon, S; Yoon, M; Yang, Kyounghoon; Kwon, Young Se, Conference on Optoelectronic and Microelectronic Materials and Devices, pp.123, Conference on Optoelectronic and Microelectronic Materials and Devices, 2000-12-06

34
Fabrication of Serpentine shaped Laser Diode Using Reactive Ion Beam Etching

Kwon, Young Se; Hong, Songcheol; Choi, JH, International Symposium on Compound Semiconductors, pp.1013 - 1018, 1995

35
Fabrication of the Microlens-attached AlGaAs/GaAs LED

Kwon, Young Se, International Conference on VLSI and CAD, 1993

36
Fabrication of the tile type transceiver module package for X-band phase array radar using selectively anodized aluminum substrate

Chun J.-H.; Yeo S.-K.; Kwon, Young Se, 2007 1st Asian and Pacific Conference on Synthetic Aperture Radar, APSAR 2007, pp.136 - 138, 2007-11-05

37
Fabrication of Top Electrode Vertical Cavity Front Surface Emitting Laser Diode (FSELD) Using HBT Process

Kwon, Young Se, IEEE/LEOS Annual Meeting, 1990

38
Fabrication of Vertical Cavity Front Surface Emitting Laser

Kwon, Young Se, International Conference on Solid State Device and Materials, 1990

39
Fabrication of Vertical Cavity Front Surface Emitting Laser Diode(FSELD) Using HBT Process

Yoo, Hoi-Jun; Hayes, J.R.; Andreadakis, N.; Paek, E.G.; Harbison, J.P; Florez, L.T.; Chang, G.K.; et al, International Solid State Device and material Meeting, pp.769 - 772, SSDM, 1990

40
Fiber-optic plate bonded Al0.3Ga0.7As/GaAs transmission photocathode

Kwon, Young Se, CLEO/Pacific Rim, 2003

41
GaAs junction-gate FECFET for the digital integrated circuits

Kim Chang-Tae; Lee Yoon-Jong; Kwon, Young Se, Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92, pp.310 - 312, 1992-08-26

42
GaAs MESFET with very short channel length fabricated by selective MOCVD technique

Kim Chang-Tae; Hong Chang-Hee; Kwon, Young Se, 23rd International Conference on Solid State Devices and Materials - SSDM '91, pp.399 - 401, 1991-08-27

43
GaAs multichip packaging using the Selectively Oxidized Porous Silicon(SOPS) substrate

Nam Ch.-M.; Jung I.-H.; Lee J.-S.; Cho Y.-H.; Kwon, Young Se, Proceedings of the 1998 IEEE 7th Topical Meeting on Electrical Performance of Electronic Packaging, pp.113 - 115, IEEE, 1998-10-26

44
High efficiency GaAs LED with a meltback micro-lens

Hahm Sung-Ho; Cho Gyu-Seog; Kwon, Young Se, 22nd International Conference on Solid State Devices and Materials, pp.537 - 540, 1990-08-22

45
High performance air gap transmission lines for millimeter wave applications

Jeong I.; Shin S.-H.; Go J.-H.; Lee J.-S.; Nam C.-M.; Kim D.-W.; Kwon, Young Se, IEEE MSS-S International Microwave Symposium Digest, v.2, pp.661 - 664, 2002-06-02

46
High performance RF passive integration on Si smart substrate

Kim D.-W.; Jeong I.-H.; Sung H.-S.; Kong T.-O.; Lee J.-S.; Nam C.-M.; Kwon, Young Se, IEEE MTT-S International Microwave Symposium Digest, v.3, pp.1561 - 1564, 2002-06-02

47
High Quality RF Passive Integration using 35 um Thick Oxide Manufacturing Technology

Kwon, Young Se, ECTC, pp.1007 - 1011, 2002

48
High quality solenoid inductor for Ddielectric Multi-chip Module (D-MCM)

Yook J.-M.; Ko J.-H.; Ha M.-L.; Kwon, Young Se, Conference Proceedings- 34th European Microwave Conference, v.3, pp.1365 - 1368, 2004-10-12

49
High-Frequency Performance of GaAs Floated Electron Channer FET(FECFET)

Kwon, Young Se, International Conference on VLSI and CAD, 1993

50
Hybrid distributed amplifier using MCM-D based on selectively anodized aluminium substrate

Sohn B.-I.; Shin S.-H.; Kwon, Young Se, 4th European Radar Conference, EURAD, pp.339 - 342, 2007-10-10

51
Hybrid distributed amplifier using MCM-D based on selectively anodized aluminium substrate

Sohn B.-I.; Shin S.-H.; Kwon, Young Se, 37th European Microwave Conference, EUMC, pp.1618 - 1621, 123, 2007-10-09

52
III-V compound Semiconductor Device Researches at KAIST

Kwon, Young Se, KOSEF/US NSF Joint Seminar on the Physics of Semiconductor Materials and Applications, 1986

53
Influence of substrate misorientation on facet formation in selective area metalorganic chemical vapor deposition

Shin Hyunchol; Kwon, Young Se, Proceedings of the 1996 MRS Fall Meeting, v.441, pp.163 - 168, 1996-12-02

54
InP/InGaAs HBTs using crystallographically defined emitter contact technology

Kim, M.; Jeon, S. K.; Shin, S. H.; Yang, Kyounghoon; Kwon, Young Se, 2003 IEEE MTT-S International Microwave Symposium Digest, pp.1279 - 1282, IEEE, 2003-06-08

55
InP/InGaAs/InP Double-Hetero-junction Solar Cells with Increased Open-Circuit Voltage

Kwon, Young Se, SSDM, pp.90 - 91, 2004

56
InP/InGaAsP/InP double hetero-junction solar cells with increased short-circuit current

Kim C.-Y.; Cha J.-H.; Kim J.; Kwon, Young Se, 31st IEEE Photovoltaic Specialists Conference - 2005, pp.703 - 706, 2005-01-03

57
Input harmonics control using non-linear capacitor in GaAs FET power amplifier

Jeon, Kye-ik; Kwon, Young Se; Hong, Songcheol, Proceedings of the 1997 IEEE MTT-S International Microwave Symposium. Part 1 (of 3), v.2, pp.817 - 820, 1997-06-08

58
Integrated passive devices on the selectively anodized aluminum oxide

Yook J.-M.; Yu J.-I.; Kim Y.-J.; Kwon, Young Se, European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies - 39th European Microwave Conference, EuMC 2009, pp.1654 - 1657, 2009-09-28

59
Integrated Twin-Guide Corner Reflector Lasers with Surface-Grating-Etching for Simple Mode Selectivity

Kwon, Young Se, ICSSDM, 1997

60
Integration of a HEMT and an MSM PD Using an InGaAsP(1.3 um) Buffer

Kwon, Young Se, SSDM, pp.942 - 943, 2004

rss_1.0 rss_2.0 atom_1.0