Showing results 1 to 60 of 111
A 1.12mW continuous healthcare monitor chip integrated on a planar fashionable circuit board Kim, H.; Kim, Y.; Kwon, Young Se; Yoo, Hoi-Jun, 2008 IEEE International Solid State Circuits Conference, ISSCC, pp.150 - 151, 2008-02-03 |
A compact high power T/R module for X-band phased array radar applications using an anodized aluminum substrate Yeo S.-K.; Kim C.H.; Ahn J.-H.; Chun J.-H.; Kwon, Young Se, European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies - 39th European Microwave Conference, EuMC 2009, pp.1365 - 1368, 2009-09-28 |
A Compact Long Cavity Laser Diode with a Single Longitudinal Mode Kwon, Young Se, OECC `97, 1997 |
A frequency agile floating-patch MEMS antenna for 42 GHz applications Cho Y.H.; Kahng S.-T.; Choi W.; Ha M.-L.; Pyo C.; Kwon, Young Se, 2005 IEEE Antennas and Propagation Society International Symposium and USNC/URSI Meeting, pp.512 - 515, 2005-07-03 |
A GaAs Junction-Gate FECFET for the Digital Integrated Circuits Kwon, Young Se, International Conference on Solid State Device and Materials, 1992 |
A GaAs MESFET with very short channel length Fabricated by Selective MOCVD Kwon, Young Se, International Conference on Solid State Device and Materials, 1991 |
A monolithically integrated InP-based HBT and p-i-n photodiode using new stack-shared layer scheme Kwon, Young Se, EUMC 2003, 2003 |
A Multichip on Oxide of 1.25 Gbps 80 dBohm Fully Differential CMOS Transimpedance Amplifier for Optical Interconnect Applications Kwon, Young Se, ISSCC 2002, pp.80 - 81, 2002 |
A New GaAs BiFET Structure Using Selective MOCVD Technique Kwon, Young Se, International Symposium on Compound Semiconductors, 1995 |
A New GaAs FET with Deln-Delp dipole Barrier(DIB) Kwon, Young Se; Hong, Songcheol; Cho, HR, International Conference on Solid State Device and Materials, 1993 |
A New High Radiance LED Structure with Circular 45 degree Corner Reflector Kwon, Young Se, ICSSDM, 2000 |
A Novel Area-Variable Varactor Diode Kwon, Young Se, International Symposium on Compound Semiconductors, pp.733 - 736, 1994 |
A Novel Fabrication Technology for Integrating FET'sand High Performance Diodes, and Its Application to MMIC VCO. Kwon, Young Se, IEDM '96, 1996 |
A Vertical Integration of Laser Diode and Transistor Kwon, Young Se, IEEE Region 10 conference, 1987 |
A Waveguide on the Oxidized Porous Silicon for the Robust Alignment in the Silicon Optical Bench Kwon, Young Se, First International Sysposium on Integrated Optoelectronics(Electro-Chemical Society Meeting), Electro-Chemical Society, 2002-05 |
AlGaAs/GaAs HBT Fabricated using Selective MOCVD Kwon, Young Se; Hong, Songcheol; Son, JH; Kim, CT, International Conference on Solid State Device and Materials, pp.610 - 612, 1994 |
AlGaAs/GaAs lens-shaped LED with high efficiency and narrow field pattern Cho Gyu-Seog; Kwon, Young Se, Optoelectronic Component Technologies, v.1813, pp.142 - 153, 1992-12-16 |
An X-band high power amplifier module package using selectively anodized aluminum substrate Yeo S.-K.; Chun J.-H.; Kim K.-M.; Yook J.-M.; Kwon, Young Se, European Microwave Week 2007, EuMW 2007 - 2nd European Microwave Integrated Circuits Conference, EuMIC 2007, pp.559 - 562, 2007-10-08 |
An X-band high power amplifier module package using selectively anodized aluminum substrate Yeo S.-K.; Chun J.-H.; Kim K.-M.; Yook J.-M.; Kwon, Young Se, 37th European Microwave Conference, EUMC, pp.1357 - 1360, 2007-10-09 |
Balanced BPFs implemented using IPD (integrated passive devices) technology Yook J.-M.; Yu J.-I.; Park J.-C.; Kwon, Young Se, 13th European Microwave Week 2010, EuMW2010: Connecting the World - 40th European Microwave Conference, EuMC 2010, pp.429 - 432, 2010-09-28 |
Bell-Shaped Light Emitting Diode Structure with 45 degree Corner Reflector, Deep Side Wall and Microlens Kwon, Young Se, SPIE, 2002 |
Characteristics of AlGaN/GaN HEMT Devices with SiN Passivation Kwon, Young Se, IEDM, 2000 |
Chemical Etching of InGaAsP/InP Using HBr-H3PO4-Cr2O7 and Its Applicationto Microlens array Kwon, Young Se, International Conference on Indium Phosphide and Related Materials, 2000 |
Chip scale package for SAW filter on the oxidized porous silicon using flip-chip bonding and Cu plated metal wall Ha M.-L.; Lee J.-S.; Kwon, Young Se, 52nd Electronic Components and Technology Conference, pp.372 - 377, Electronic Components and Technology Conference, 2002-05-28 |
Compact front end modules for WLAN applications with integrated passive devices using selectively anodized aluminum substrate Yu J.-I.; Yook J.-M.; Park J.-C.; Kim C.-H.; Kwon, Young Se, 13th European Microwave Week 2010: Connecting the World, EuMIC 2010, pp.329 - 332, 123, 2010-09-26 |
Effects of Buffer Structures of InGaAs MESFETs. Kwon, Young Se; Hong, Songcheol; Lee, JJ; Kim, DW; Lee, HG; Pyun, KE; Kwon, YS, International Symposium on Compound Semiconductors, 1995 |
Embedded IC technology for compact packaging inside aluminum substrate (pocket embedded Packaging) Kim K.-M.; Yook J.-M.; Yeo S.-K.; Kwon, Young Se, European Microwave Week 2007, EuMW 2007 - 2nd European Microwave Integrated Circuits Conference, EuMIC 2007, pp.327 - 330, 123, 2007-10-08 |
Fabrication and analysis of high-Q inductor on anodized aluminum for high power package Lee J.-H.; Shin S.-H.; Kim K.M.; Kwon, Young Se, 36th European Microwave Conference, EuMC 2006, pp.1387 - 1390, 2006-09-10 |
Fabrication and characterization of two-dimensional phased arrays of vertical cavity surface emitting lasers Yoo, Hoi-Jun; Kwon, Young Se; Hayes, J.R.; Andreadakis, N.; Paek, E.G.; Chang, G.K.; Harbinson, J.P.; et al, IEEE/LEOS Annual Meeting, 1990 |
Fabrication of InGaAsP/InP Twin-guide Laser Diode with Rectangular Ring Cavity Kwon, Young Se, ICSSDM, pp.604 - 605, 2001 |
Fabrication of integrated twin-guide corner reflector surface-emitting lasers with reactive ion-beam etching Kwon, Young Se, ISCS, ISCS, 1997-09 |
Fabrication of monolithic VCO using selective-area MOCVD. Kwon, Young Se, International Symposium on Compound Semiconductors, 1996 |
Fabrication of novel self-aligned InP/InGaAs HBT''s using dummy emitter Kim, M; Jeon, S; Yoon, M; Yang, Kyounghoon; Kwon, Young Se, Conference on Optoelectronic and Microelectronic Materials and Devices, pp.123, Conference on Optoelectronic and Microelectronic Materials and Devices, 2000-12-06 |
Fabrication of Serpentine shaped Laser Diode Using Reactive Ion Beam Etching Kwon, Young Se; Hong, Songcheol; Choi, JH, International Symposium on Compound Semiconductors, pp.1013 - 1018, 1995 |
Fabrication of the Microlens-attached AlGaAs/GaAs LED Kwon, Young Se, International Conference on VLSI and CAD, 1993 |
Fabrication of the tile type transceiver module package for X-band phase array radar using selectively anodized aluminum substrate Chun J.-H.; Yeo S.-K.; Kwon, Young Se, 2007 1st Asian and Pacific Conference on Synthetic Aperture Radar, APSAR 2007, pp.136 - 138, 2007-11-05 |
Fabrication of Top Electrode Vertical Cavity Front Surface Emitting Laser Diode (FSELD) Using HBT Process Kwon, Young Se, IEEE/LEOS Annual Meeting, 1990 |
Fabrication of Vertical Cavity Front Surface Emitting Laser Kwon, Young Se, International Conference on Solid State Device and Materials, 1990 |
Fabrication of Vertical Cavity Front Surface Emitting Laser Diode(FSELD) Using HBT Process Yoo, Hoi-Jun; Hayes, J.R.; Andreadakis, N.; Paek, E.G.; Harbison, J.P; Florez, L.T.; Chang, G.K.; et al, International Solid State Device and material Meeting, pp.769 - 772, SSDM, 1990 |
Fiber-optic plate bonded Al0.3Ga0.7As/GaAs transmission photocathode Kwon, Young Se, CLEO/Pacific Rim, 2003 |
GaAs junction-gate FECFET for the digital integrated circuits Kim Chang-Tae; Lee Yoon-Jong; Kwon, Young Se, Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92, pp.310 - 312, 1992-08-26 |
GaAs MESFET with very short channel length fabricated by selective MOCVD technique Kim Chang-Tae; Hong Chang-Hee; Kwon, Young Se, 23rd International Conference on Solid State Devices and Materials - SSDM '91, pp.399 - 401, 1991-08-27 |
GaAs multichip packaging using the Selectively Oxidized Porous Silicon(SOPS) substrate Nam Ch.-M.; Jung I.-H.; Lee J.-S.; Cho Y.-H.; Kwon, Young Se, Proceedings of the 1998 IEEE 7th Topical Meeting on Electrical Performance of Electronic Packaging, pp.113 - 115, IEEE, 1998-10-26 |
High efficiency GaAs LED with a meltback micro-lens Hahm Sung-Ho; Cho Gyu-Seog; Kwon, Young Se, 22nd International Conference on Solid State Devices and Materials, pp.537 - 540, 1990-08-22 |
High performance air gap transmission lines for millimeter wave applications Jeong I.; Shin S.-H.; Go J.-H.; Lee J.-S.; Nam C.-M.; Kim D.-W.; Kwon, Young Se, IEEE MSS-S International Microwave Symposium Digest, v.2, pp.661 - 664, 2002-06-02 |
High performance RF passive integration on Si smart substrate Kim D.-W.; Jeong I.-H.; Sung H.-S.; Kong T.-O.; Lee J.-S.; Nam C.-M.; Kwon, Young Se, IEEE MTT-S International Microwave Symposium Digest, v.3, pp.1561 - 1564, 2002-06-02 |
High Quality RF Passive Integration using 35 um Thick Oxide Manufacturing Technology Kwon, Young Se, ECTC, pp.1007 - 1011, 2002 |
High quality solenoid inductor for Ddielectric Multi-chip Module (D-MCM) Yook J.-M.; Ko J.-H.; Ha M.-L.; Kwon, Young Se, Conference Proceedings- 34th European Microwave Conference, v.3, pp.1365 - 1368, 2004-10-12 |
High-Frequency Performance of GaAs Floated Electron Channer FET(FECFET) Kwon, Young Se, International Conference on VLSI and CAD, 1993 |
Hybrid distributed amplifier using MCM-D based on selectively anodized aluminium substrate Sohn B.-I.; Shin S.-H.; Kwon, Young Se, 4th European Radar Conference, EURAD, pp.339 - 342, 2007-10-10 |
Hybrid distributed amplifier using MCM-D based on selectively anodized aluminium substrate Sohn B.-I.; Shin S.-H.; Kwon, Young Se, 37th European Microwave Conference, EUMC, pp.1618 - 1621, 123, 2007-10-09 |
III-V compound Semiconductor Device Researches at KAIST Kwon, Young Se, KOSEF/US NSF Joint Seminar on the Physics of Semiconductor Materials and Applications, 1986 |
Influence of substrate misorientation on facet formation in selective area metalorganic chemical vapor deposition Shin Hyunchol; Kwon, Young Se, Proceedings of the 1996 MRS Fall Meeting, v.441, pp.163 - 168, 1996-12-02 |
InP/InGaAs HBTs using crystallographically defined emitter contact technology Kim, M.; Jeon, S. K.; Shin, S. H.; Yang, Kyounghoon; Kwon, Young Se, 2003 IEEE MTT-S International Microwave Symposium Digest, pp.1279 - 1282, IEEE, 2003-06-08 |
InP/InGaAs/InP Double-Hetero-junction Solar Cells with Increased Open-Circuit Voltage Kwon, Young Se, SSDM, pp.90 - 91, 2004 |
InP/InGaAsP/InP double hetero-junction solar cells with increased short-circuit current Kim C.-Y.; Cha J.-H.; Kim J.; Kwon, Young Se, 31st IEEE Photovoltaic Specialists Conference - 2005, pp.703 - 706, 2005-01-03 |
Input harmonics control using non-linear capacitor in GaAs FET power amplifier Jeon, Kye-ik; Kwon, Young Se; Hong, Songcheol, Proceedings of the 1997 IEEE MTT-S International Microwave Symposium. Part 1 (of 3), v.2, pp.817 - 820, 1997-06-08 |
Integrated passive devices on the selectively anodized aluminum oxide Yook J.-M.; Yu J.-I.; Kim Y.-J.; Kwon, Young Se, European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies - 39th European Microwave Conference, EuMC 2009, pp.1654 - 1657, 2009-09-28 |
Integrated Twin-Guide Corner Reflector Lasers with Surface-Grating-Etching for Simple Mode Selectivity Kwon, Young Se, ICSSDM, 1997 |
Integration of a HEMT and an MSM PD Using an InGaAsP(1.3 um) Buffer Kwon, Young Se, SSDM, pp.942 - 943, 2004 |
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