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1
Heterogeneous 3D Sequential CFET with Ge (110) Nanosheet p-FET on Si (100) bulk n-FET by Direct Wafer Bonding

Kim, Seong Kwang; Lim, Hyeong-Rak; Jeong, Jaejoong; Lee, Seung Woo; Kim, Joon Pyo; Jeong, Jaeyoung; Kim, Bong Ho; et al, 2022 International Electron Devices Meeting, IEDM 2022, pp.2011 - 2014, Institute of Electrical and Electronics Engineers Inc., 2022-12

2
Hybrid 3D Sequential CFET with Ge (110) Nanosheet p-FET on Si (100) bulk n-FET by Direct Wafer Bonding

Kim, Seong Kwang; Lim, Hyeong-Rak; Jeong, Jaejoong; Lee, Seung Woo; Kim, Joon Pyo; Jeong, Jaeyoung; Kim, Bong Ho; et al, 68th IEEE International Electron Devices Meeting, IEDM 2022, IEEE, 2022-12-03

3
Role of Inter-Layer Dielectric on the Electrical and Heat Dissipation Characteristics in the Heterogeneous 3D Sequential CFETs with Ge pFETs on Si nFETs

Kim, Seongkwang; Lim, Hyeong-Rak; SHIM, JOONSUP; Baek, Woo Jin; Kim, Seongho; Park, YoungKeun; Jeong, Jaejoong; et al, 2023 International Electron Devices Meeting (IEDM), Institute of Electrical and Electronics Engineers Inc., 2023-12-11

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