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Showing results 1 to 8 of 8

1
A novel floating body cell memory with a laterally engineered bandgap using a Si-Si:C heterostructure

Choi, S.-J.; Moon, D.-I.; Ding, Y.; Kong, E.Y.J.; Yeo, Y.-C.; Choi, Yang-Kyu, 2010 IEEE International Electron Devices Meeting, IEDM 2010, IEDM, 2010-12-06

2
A novel TFT with a laterally engineered bandgap for of 3D logic and flash memory

Choi, S.-J.; Han, J.-W.; Kim, S.; Moon, D.-I.; Jang, M.; Choi, Yang-Kyu, 2010 Symposium on VLSI Technology, VLSIT 2010, pp.111 - 112, VLSIT, 2010-06-15

3
Band offset FinFET-based URAM (unified-RAM) built on SiC for multi-functioning NVM and capacitorless 1T-DRAM

Han, J.-W.; Ryu, S.-W.; Kim, S.; Kim, C.-J.; Ahn, J.-H.; Choi, S.-J.; Kyu, J.C.; et al, Symposium on VLSI Technology Digest of Technical Papers, VLSIT 2008, pp.200 - 201, IEEE, 2008-06-17

4
Energy band engineered unified-RAM (URAM) for multi-functioning 1T-DRAM and NVM

Han, J.-W.; Ryu, S.-W.; Kim, S.; Kim, C.-J.; Ahn, J.-H.; Choi, S.-J.; Choi, K.J.; et al, IEEE International Electron Devices Meeting, IEDM 2008, IEEE, 2008-12-15

5
High speed flash memory and 1T-DRAM on dopant segregated schottky barrier (DSSB) FinFET SONOS device for multi-functional SoC applications

Choi, S.-J.; Han, J.-W.; Kim, S.; Kim, D.-H.; Jang, M.-G.; Yang, J.-H.; Kim, J.S.; et al, 2008 IEEE International Electron Devices Meeting, IEDM 2008, IEEE, 2008-12-15

6
MEMS variable capacitor with superior linearity and large tuning ratio by moving the plate to the increasing-gap direction

Han, C.-H.; Choi, D.-H.; Choi, S.-J.; Yoon, Jun-Bo, 24th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2011, pp.772 - 775, IEEE, 2011-01-23

7
Performance breakthrough in NOR flash memory with dopant-segregated Schottky-barrier (DSSB) SONOS devices

Choi, S.-J.; Han, J.-W.; Kim, S.; Moon, D.-I.; Jang, M.-G.; Jin, S.K.; Kwang, H.K.; et al, 2009 Symposium on VLSI Technology, VLSIT 2009, pp.222 - 223, IEEE, 2009-06-16

8
Ultimately scaled 20nm unified-RAM

Moon, D.-I.; Choi, S.-J.; Kim, C.-J.; Kim, J.-Y.; Lee, J.-S.; Oh, J.-S.; Lee, G.-S.; et al, 2010 IEEE International Electron Devices Meeting, IEEE, 2010-12-06

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