A novel floating body cell memory with a laterally engineered bandgap using a Si-Si:C heterostructure

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Publisher
IEDM
Issue Date
2010-12-06
Language
English
Citation

2010 IEEE International Electron Devices Meeting, IEDM 2010

ISSN
0163-1918
URI
http://hdl.handle.net/10203/164689
Appears in Collection
EE-Conference Papers(학술회의논문)
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