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Showing results 1 to 5 of 5

1
An Optimum Strategy for the Low Voltage Operation of the Mechanical Switch

Lee, Byung-Hyun; Kang, Min-Ho; Hur, Jae; Ahn, Dae-Chul; Lee, Dong-Il; Bae, Hagyoul; Choi, Yang-Kyu, IEEE NANO 2015, IEEE, 2015-07-29

2
First Demonstration of a Wrap-Gated CNT-FET with Vertically-Suspended Channels

Lee, Dong-Il; Lee, Byung-Hyun; Yoon, Jin-Su; Choi, Bong-Sik; Park, Jun-Young; Ahn, Dae-Chul; Kim, Choong-Ki; et al, International Electron Devices Meeting (IEDM), International Electron Devices Meeting (IEDM), 2016-12-05

3
Improved Split C-V Technique for Accurate Extraction of Mobility by Considering Effective Inversion Charges in p-Channel Si0.8Ge0.2 MOSFET

Bang, Te-Wook; Bae, Hagyoul; Kim, Choong-Ki; Hur, Jae; Park, Jun-Young; Ahn, Dae-Chul; Kim, Gun-Hee; et al, 한국 반도체 학술 대회, 한국 반도체 학술 대회, 2016-02-23

4
Triboelectrification driven fin-fact (flip-flop actuated channel transistor) for security application

Kim, Daewon; Ahn, Dae-Chul; Allen, Mark G.; Choi, Yang-Kyu, 30th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2017, pp.171 - 174, Institute of Electrical and Electronics Engineers Inc., 2017-01

5
Vertically Integrated zRAM (VI-zRAM): Toward Extremely Scaled Memory

Lee, Byung-Hyun; Ahn, Dae-Chul; Kang, Min-Ho; Jeon, Seung-Bae; Bang, Te-Wook; Bae, Hagyoul; Park, Jun-Young; et al, ECS PRIME, ECS PRIME, 2016-10-05

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