Showing results 1 to 6 of 6
Device simulation based on DFT-NEGF using equivalent transport model Jeong, Woo-Jin; Lee, Jaehyun; Kim, Seungchul; Lee, Kwang-Ryeol; Shin, Min-Cheol, The 9th International Conference on Computational Physcics, ICCP-9, 2015-01-08 |
Effects of Strain for Nanowire Schottky Barrier p-MOSFETs Seo, Junbeom; Srivastave, Pooja; Lee, Jaehyun; Jung, Hyo Eun; Kim, Seung chul; Lee, Kwang-Ryeol; Shin, Min-Cheol, ISPSA-2014, ISPSA-2014, 2014-12-08 |
Multiscale simulation of Schottky barrier tunnel transistors Shin, Min-Cheol; Srivastava, Pooja; Seo, Junbeom; Lee, Jaehyun; Kim, Seungchul; Lee, Kwang-Ryeol, The 9th International Conference on Computational Physcics, ICCP-9, 2015-01-09 |
Quantum Simulation of Ultra-thin-body Double-Gate Negative Capacitance FETs with Sub-60mV/decade Switching Behavior Lee, Jaehyun; Jeong, Woo-Jin; Kang, Doo Hyung; Shin, Mincheol, NANO KOREA 2014, NANO KOREA, 2014-07-03 |
Simulation of dual material gate InAs Schottky barrier field effect transistor 최원철; 이재현; 신민철, 제21회 한국반도체학술대회, 한국반도체학술대회, 2014-02-25 |
Simulation of III-V UTB SB-MOSFETs using tight-binding band-structure calculations 최호원; 이재현; 이여름; 신민철, 제21회 한국반도체학술대회, 한국반도체학술대회, 2014-02-25 |
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