Quantum Simulation of Ultra-thin-body Double-Gate Negative Capacitance FETs with Sub-60mV/decade Switching Behavior

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Publisher
NANO KOREA
Issue Date
2014-07-03
Language
ENG
Citation

NANO KOREA 2014

URI
http://hdl.handle.net/10203/189681
Appears in Collection
EE-Conference Papers(학술회의논문)
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