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Growth of Ge and GaAs Films on Electron-Beam Exposed CaF2/Si(111)Structures Lee, Hee Chul; Ishiwara, H; Kanemaru, S; Furukawa, S, Proc. 2nd Int. Symp. on Si MBE, ed. by J .C .Bean and L . J . Schowalter(the Electrochemical, pp.182 - 190, 1987 |
Improvement of the Quality of GaAs Films on Fluorides Using Electron-Beam Exposure Epitaxy(EBE-Epitaxy) Lee, Hee Chul; Kanemaru, S; Ishiwara, H; Furukawa, S, Proc. 18th symp. on Ion Implantation and Submicron Fabrication, Saitama Japen, pp.37 - 40, 1987 |
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