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Monolithic 3D Integrated InGaAs HEMTs on Si for Next-Generation Communication: Record fMAX and Relaxed Self-Heating of Top Devices by a Novel M3D Structure

Jeong, Jaeyong; Kim, Seong Kwang; Kim, Jongmin; Geum, Dae-Myeong; Kim, Sanghyeon, 2021 IEEE International Electron Devices Meeting, IEDM 2021, pp.11.2.1 - 11.2.4, Institute of Electrical and Electronics Engineers Inc., 2021-12

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Role of Inter-Layer Dielectric on the Electrical and Heat Dissipation Characteristics in the Heterogeneous 3D Sequential CFETs with Ge pFETs on Si nFETs

Kim, Seongkwang; Lim, Hyeong-Rak; SHIM, JOONSUP; Baek, Woo Jin; Kim, Seongho; Park, YoungKeun; Jeong, Jaejoong; et al, 2023 International Electron Devices Meeting (IEDM), Institute of Electrical and Electronics Engineers Inc., 2023-12-11

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