Showing results 2 to 3 of 3
Substituted Aluminum Metal Gate on high-K Dielectric for low work-function and Fermi-Level Pinning Free Cho, Byung Jin; Park, CS; Tang, LJ; Kwong, DL, International Electron Device Meeting (IEDM), pp.0 - 0, 2004-12-13 |
Top-Surface Aluminized and Nitrided Hafnium Oxide Using Synthesis of Thin AlN and HfO2 Stacked Layer Cho, Byung Jin; Park, CS; Tang, LJ; Wang, W; Kwong, DL, Conf. on Solid State Devices and Materials (SSDM), pp.0 - 0, 2004-09-14 |
Discover