Showing results 6 to 7 of 7
Separate Extraction of Source and Drain Resistances in Vertically Integrated Junctionless Nanowire Field Effect Transistors 서명수; Lee, Byung-Hyun; Bae, Hagyoul; 김건희; Choi, Yang-Kyu, 한국반도체학술대회, 한국반도체학술대회, 2017-02-14 |
Vertically Integrated zRAM (VI-zRAM): Toward Extremely Scaled Memory Lee, Byung-Hyun; Ahn, Dae-Chul; Kang, Min-Ho; Jeon, Seung-Bae; Bang, Te-Wook; Bae, Hagyoul; Park, Jun-Young; et al, ECS PRIME, ECS PRIME, 2016-10-05 |
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