A new low-resistance antifuse with planar metal/dielectric/poly-Si/dielectric/metal structure

Abstract

A new antifuse with metal/dielectric/poly-Si/dielectric/metal structure has been developed for use in FPGAs as a voltage programmable Link. This structure has two thermally grown dielectrics with an 8.5 nm thickness and a boron-doped poly-Si pad. Low programmed on-state resistance of similar to 20 Omega was achieved by the formation of Al-Si metal alloy link in the doped poly-Si pad. The metal link was formed by the diffusion of Al from the positive electrode into poly-Si. The dielectric property of this antifuse might be reliable because of no hillocks on the bottom electrode and no interaction between the thermally grown SiO2 and the bottom electrode.