Fabrication of $In_{0.53}Ga_{0.47}As$ photodiode by LPE$In_{0.53}Ga_{0.47}As$ 에피층 성장을 위한 수광 소자의 제작

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The properties of InGaAs/(100)InP were studied, which is a promising material for the electrical device using its highest room temperature mobility and for the optical device utilizing its long wavelength region($\lambda=1.3-1.55$um) band gap. The growth characteristics were studied experimentally. As grown surface were wavy and partially flat, which were the characteristics of LPE grown layer and were suspected to be due to the ternary-binary interface and long time baking. To make an optical device, the diode was fabricated and tested. To check its electrical properties, I-V and C-V measurements were taken.
Advisors
Kwon, Young-Seresearcher권영세researcher
Description
한국과학기술원 : 전기 및 전자공학과,
Publisher
한국과학기술원
Issue Date
1986
Identifier
65239/325007 / 000841296
Language
eng
Description

학위논문(석사) - 한국과학기술원 : 전기 및 전자공학과, 1986.2, [ [iii], 65 p. ]

URI
http://hdl.handle.net/10203/38945
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=65239&flag=dissertation
Appears in Collection
EE-Theses_Master(석사논문)
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