Fabrication of $In_{0.53}Ga_{0.47}As$ photodiode by LPE$In_{0.53}Ga_{0.47}As$ 에피층 성장을 위한 수광 소자의 제작
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | Kwon, Young-Se | - |
| dc.contributor.advisor | 권영세 | - |
| dc.contributor.author | Chung, Gi-Oong | - |
| dc.contributor.author | 정기웅 | - |
| dc.date.accessioned | 2011-12-14T02:11:26Z | - |
| dc.date.available | 2011-12-14T02:11:26Z | - |
| dc.date.issued | 1986 | - |
| dc.identifier.uri | http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=65239&flag=dissertation | - |
| dc.identifier.uri | http://hdl.handle.net/10203/38945 | - |
| dc.description | 학위논문(석사) - 한국과학기술원 : 전기 및 전자공학과, 1986.2, [ [iii], 65 p. ] | - |
| dc.description.abstract | The properties of InGaAs/(100)InP were studied, which is a promising material for the electrical device using its highest room temperature mobility and for the optical device utilizing its long wavelength region($\lambda=1.3-1.55$um) band gap. The growth characteristics were studied experimentally. As grown surface were wavy and partially flat, which were the characteristics of LPE grown layer and were suspected to be due to the ternary-binary interface and long time baking. To make an optical device, the diode was fabricated and tested. To check its electrical properties, I-V and C-V measurements were taken. | eng |
| dc.language | eng | - |
| dc.publisher | 한국과학기술원 | - |
| dc.title | Fabrication of $In_{0.53}Ga_{0.47}As$ photodiode by LPE | - |
| dc.title.alternative | $In_{0.53}Ga_{0.47}As$ 에피층 성장을 위한 수광 소자의 제작 | - |
| dc.type | Thesis(Master) | - |
| dc.identifier.CNRN | 65239/325007 | - |
| dc.description.department | 한국과학기술원 : 전기 및 전자공학과, | - |
| dc.identifier.uid | 000841296 | - |
| dc.contributor.localauthor | Kwon, Young-Se | - |
| dc.contributor.localauthor | 권영세 | - |
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