DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kang, Mingu | ko |
dc.contributor.author | Hong, Woonggi | ko |
dc.contributor.author | Lee, Inseong | ko |
dc.contributor.author | Park, Seohak | ko |
dc.contributor.author | Park, Cheolmin | ko |
dc.contributor.author | Bae, Sanggeun | ko |
dc.contributor.author | Lim, Hyeongjin | ko |
dc.contributor.author | Choi, Sung-Yool | ko |
dc.date.accessioned | 2024-09-12T13:00:08Z | - |
dc.date.available | 2024-09-12T13:00:08Z | - |
dc.date.created | 2024-08-16 | - |
dc.date.issued | 2024-08 | - |
dc.identifier.citation | ACS APPLIED MATERIALS & INTERFACES, v.16, no.33, pp.43849 - 43859 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | http://hdl.handle.net/10203/322974 | - |
dc.description.abstract | Molybdenum disulfide (MoS2) is a promising candidate for next-generation transistor channel materials, boasting outstanding electrical properties and ultrathin structure. Conventional ion implantation processes are unsuitable for atomically thin two-dimensional (2D) materials, necessitating nondestructive doping methods. We proposed a novel approach: tunable n-type doping through sulfur vacancies (VS) and p-type doping by nitrogen substitution in MoS2, controlled by the duration of NH3 plasma treatment. Our results reveal that NH3 plasma exposure of 20 s increases the 2D sheet carrier density (n2D) in MoS2 field-effect transistors (FETs) by +4.92 × 1011 cm-2 at a gate bias of 0 V, attributable to sulfur vacancy generation. Conversely, treatment of 40 s reduces n2D by −3.71 × 1011 cm-2 due to increased nitrogen doping. X-ray photoelectron spectroscopy, Raman spectroscopy, and photoluminescence analyses corroborate these electrical characterization results, indicating successful n- and p-type doping. Temperature-dependent measurements show that the Schottky barrier height at the metal-semiconductor contact decreases by −31 meV under n-type conditions and increases by +37 meV for p-type doping. This study highlights NH3 plasma treatment as a viable doping method for 2D materials in electronic and optoelectronic device engineering. | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Tunable Doping Strategy for Few-Layer MoS2 Field-Effect Transistors via NH3 Plasma Treatment | - |
dc.type | Article | - |
dc.identifier.wosid | 001291096200001 | - |
dc.identifier.scopusid | 2-s2.0-85201123885 | - |
dc.type.rims | ART | - |
dc.citation.volume | 16 | - |
dc.citation.issue | 33 | - |
dc.citation.beginningpage | 43849 | - |
dc.citation.endingpage | 43859 | - |
dc.citation.publicationname | ACS APPLIED MATERIALS & INTERFACES | - |
dc.identifier.doi | 10.1021/acsami.4c08549 | - |
dc.contributor.localauthor | Choi, Sung-Yool | - |
dc.contributor.nonIdAuthor | Hong, Woonggi | - |
dc.contributor.nonIdAuthor | Bae, Sanggeun | - |
dc.contributor.nonIdAuthor | Lim, Hyeongjin | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article; Early Access | - |
dc.subject.keywordAuthor | transition metal dichalcogenides | - |
dc.subject.keywordAuthor | molybdenum disulfide | - |
dc.subject.keywordAuthor | metal-organic chemical vapor deposition | - |
dc.subject.keywordAuthor | NH3 plasma treatment | - |
dc.subject.keywordAuthor | substitutional nitrogen doping | - |
dc.subject.keywordAuthor | threshold voltage control | - |
dc.subject.keywordPlus | TRANSITION-METAL DICHALCOGENIDES | - |
dc.subject.keywordPlus | EVOLUTION | - |
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