DC Field | Value | Language |
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dc.contributor.author | Ko, Jong Beom | ko |
dc.contributor.author | Park, Sang-Hee Ko | ko |
dc.date.accessioned | 2024-09-12T11:00:14Z | - |
dc.date.available | 2024-09-12T11:00:14Z | - |
dc.date.created | 2024-09-12 | - |
dc.date.issued | 2024-05 | - |
dc.identifier.citation | MATERIALS LETTERS, v.363 | - |
dc.identifier.issn | 0167-577X | - |
dc.identifier.uri | http://hdl.handle.net/10203/322969 | - |
dc.description.abstract | Atomic layer deposition (ALD) is a suitable method for depositing amorphous oxide semiconductors (AOSs) because it has the potential for achieving high performance in complex structures owing to its excellent step coverage and atomic-scale controllability. Multicomponent AOSs are typically deposited using the ALD with a super-cycle method. In this study, multicomponent AOSs, i.e., IZO, ITO, and ITZO, were deposited using ALD by employing a sequential dosing of metal precursors. Their compositions were adjusted by varying the dose time of the indium precursor. Subsequently, we applied the IZO, ITO, and ITZO films in thin-film transistors (TFTs), which demonstrated normal transfer characteristics. The TFT containing ITZO with 73.9 at% indium exhibited a turn-on voltage of -1.01 V, subthreshold swing of 0.09 V/dec, and field-effect mobility of 35.9 cm 2 /(V s). | - |
dc.language | English | - |
dc.publisher | ELSEVIER | - |
dc.title | Atomic layer deposition of multicomponent amorphous oxide semiconductors with sequential dosing of metal precursors | - |
dc.type | Article | - |
dc.identifier.wosid | 001222578400001 | - |
dc.identifier.scopusid | 2-s2.0-85188127627 | - |
dc.type.rims | ART | - |
dc.citation.volume | 363 | - |
dc.citation.publicationname | MATERIALS LETTERS | - |
dc.identifier.doi | 10.1016/j.matlet.2024.136297 | - |
dc.contributor.localauthor | Park, Sang-Hee Ko | - |
dc.contributor.nonIdAuthor | Ko, Jong Beom | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Atomic layer deposition | - |
dc.subject.keywordAuthor | Multicomponent | - |
dc.subject.keywordAuthor | Thin-film transistors | - |
dc.subject.keywordAuthor | Amorphous oxide semiconductor | - |
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