(A) study on high mobility oxide semiconductors-based highly stable thin-film transistors and low energy consumption synaptic transistors for next-generation electronics

Abstract

Oxide semiconductors are attracting much interest for next-generation electronics because of their outstanding electrical properties, including high mobility and low off-current. In this study, highly stable thin-film transistors (TFTs) and low energy consumption synaptic transistors based on high mobility oxide semiconductors were investigated. Under the plasma-enhanced atomic layer deposition of a gate insulator, the effect of oxygen plasma time was investigated, and an interfacial layer that can supply hydrogen was developed by controlling the oxygen plasma time. Considering the various defects caused by the oxygen plasma time and incorporated hydrogen, two types of highly stable high mobility oxide TFTs were successfully demonstrated. In addition, this thesis introduces double oxide semiconductors as a strategy for designing human brain-like low energy consumption synaptic transistors. The highly stable TFTs and low energy consumption synaptic transistors demonstrated in this study are expected to be applied to various next-generation electronics such as memory devices, high resolution displays, and neuromorphic hardware.