DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | 김택수 | - |
dc.contributor.author | Lee, Sun Woo | - |
dc.contributor.author | 이선우 | - |
dc.date.accessioned | 2024-07-26T19:31:19Z | - |
dc.date.available | 2024-07-26T19:31:19Z | - |
dc.date.issued | 2022 | - |
dc.identifier.uri | http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=1051088&flag=dissertation | en_US |
dc.identifier.uri | http://hdl.handle.net/10203/321068 | - |
dc.description | 학위논문(석사) - 한국과학기술원 : 기계공학과, 2022.2,[iv, 43 p. :] | - |
dc.description.abstract | the interfacial adhesion value was lower when diborane gas was used for nucleation process. This was due to the diffusion of boron(B), decomposed from diborane gas, into TiN/$SiO_2$ interface, degrading the interaction between TiN and $SiO_2$. Adhesion gradually decreased as diborane flow rate (250 – 1500 sccm) and soaking time (10 – 60s) increased respectively, with residual stress unchanged. When excess amount of diborane was exposed (1500 sccm, 60s), a new boron layer was formed at W/TiN interface, leading to change in delamination path from TiN/$SiO_2$ to W/TiN, with further decrease in adhesion value. On the other hand, diborane-based W film showed much lower residual stress than silane-based W film throughout the test conditions. This was due to the difference in bulk-W grain size at film coalescence stage. Diborane-W showed larger grain size than silane-W. Applying Hoffman’s grain boundary model, intrinsic stress value of diborane-W and silane-W was calculated and compared. There was a trade-off relationship between diborane-W and silane-W in terms of crack driving force (G) and adhesion value ($G_C$). Based on this study, it is recommended that not only $G_C$ but also G be taken into consideration for precise evaluation of interfacial mechanical reliability. | - |
dc.description.abstract | In this study, two representative reducing agents, diborane ($B_2H_6$) and silane ($SiH_4$), were used to form a nucleation layer for subsequent bulk CVD-W layer. Direct, quantitative comparison of interfacial adhesion energy ($G_C$) between diborane-based and silane-based W nucleation was carried out through 4-point bending (4PB) test. The crack driving force (G) induced by residual stress was measured through wafer curvature method. The result revealed, in both cases, the weakest interface was TiN/$SiO_2$ | - |
dc.language | eng | - |
dc.publisher | 한국과학기술원 | - |
dc.subject | 텅스텐 환원가스▼a다이보레인▼a다이보레실란▼a4점 굽힘 시험법▼a잔류응력▼a계면 접합 에너지 | - |
dc.subject | Reducing agent▼aDiborane▼aSilane▼a4-Point bending test▼aCrack driving force▼aAdhesion | - |
dc.title | Effects of W nucleation processes on interfacial reliability of W/TiN/SiO2/Si multilayer structure | - |
dc.title.alternative | 텅스텐 핵 생성 공정에 따른 W/TiN/SiO2/Si 다층 구조의 계면 접합 신뢰성 | - |
dc.type | Thesis(Master) | - |
dc.identifier.CNRN | 325007 | - |
dc.description.department | 한국과학기술원 :기계공학과, | - |
dc.contributor.alternativeauthor | Kim, Taek-Soo | - |
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