DC Field | Value | Language |
---|---|---|
dc.contributor.author | Koo, Kunmo | ko |
dc.contributor.author | Chang, Joon Ha | ko |
dc.contributor.author | Ji, Sanghyeon | ko |
dc.contributor.author | Choi, Hyuk | ko |
dc.contributor.author | Cho, Seunghee H. | ko |
dc.contributor.author | Yoo, Seung Jo | ko |
dc.contributor.author | Choe, Jacob | ko |
dc.contributor.author | Lee, Hyo San | ko |
dc.contributor.author | Bae, Sang Won | ko |
dc.contributor.author | Oh, Jung Min | ko |
dc.contributor.author | Woo, Hee Suk | ko |
dc.contributor.author | Shin, Seungmin | ko |
dc.contributor.author | Lee, Kuntack | ko |
dc.contributor.author | Kim, Tae-Hong | ko |
dc.contributor.author | Jung, Yeon Sik | ko |
dc.contributor.author | Kwon, Ji-Hwan | ko |
dc.contributor.author | Lee, Ju Hyeok | ko |
dc.contributor.author | Huh, Yoon | ko |
dc.contributor.author | Kang, Sung | ko |
dc.contributor.author | Kim, Hyun You | ko |
dc.contributor.author | Yuk, Jong Min | ko |
dc.date.accessioned | 2024-07-03T03:00:07Z | - |
dc.date.available | 2024-07-03T03:00:07Z | - |
dc.date.created | 2024-06-18 | - |
dc.date.issued | 2024-04 | - |
dc.identifier.citation | NANO LETTERS, v.24, no.16, pp.4900 - 4907 | - |
dc.identifier.issn | 1530-6984 | - |
dc.identifier.uri | http://hdl.handle.net/10203/320129 | - |
dc.description.abstract | Modern semiconductor fabrication is challenged by difficulties in overcoming physical and chemical constraints. A major challenge is the wet etching of dummy gate silicon, which involves the removal of materials inside confined spaces of a few nanometers. These chemical processes are significantly different in the nanoscale and bulk. Previously, electrical double-layer formation, bubble entrapment, poor wettability, and insoluble intermediate precipitation have been proposed. However, the exact suppression mechanisms remain unclear due to the lack of direct observation methods. Herein, we investigate limiting factors for the etching kinetics of silicon with tetramethylammonium hydroxide at the nanoscale by using liquid-phase transmission electron microscopy, three-dimensional electron tomography, and first-principles calculations. We reveal suppressed chemical reactions, unstripping phenomena, and stochastic etching behaviors that have never been observed on a macroscopic scale. We expect that solutions can be suggested from this comprehensive insight into the scale-dependent limiting factors of fabrication. | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Abnormal Silicon Etching Behaviors in Nanometer-Sized Channels | - |
dc.type | Article | - |
dc.identifier.wosid | 001195003500001 | - |
dc.identifier.scopusid | 2-s2.0-85189520263 | - |
dc.type.rims | ART | - |
dc.citation.volume | 24 | - |
dc.citation.issue | 16 | - |
dc.citation.beginningpage | 4900 | - |
dc.citation.endingpage | 4907 | - |
dc.citation.publicationname | NANO LETTERS | - |
dc.identifier.doi | 10.1021/acs.nanolett.4c00326 | - |
dc.contributor.localauthor | Jung, Yeon Sik | - |
dc.contributor.localauthor | Yuk, Jong Min | - |
dc.contributor.nonIdAuthor | Choi, Hyuk | - |
dc.contributor.nonIdAuthor | Cho, Seunghee H. | - |
dc.contributor.nonIdAuthor | Yoo, Seung Jo | - |
dc.contributor.nonIdAuthor | Choe, Jacob | - |
dc.contributor.nonIdAuthor | Lee, Hyo San | - |
dc.contributor.nonIdAuthor | Bae, Sang Won | - |
dc.contributor.nonIdAuthor | Oh, Jung Min | - |
dc.contributor.nonIdAuthor | Woo, Hee Suk | - |
dc.contributor.nonIdAuthor | Shin, Seungmin | - |
dc.contributor.nonIdAuthor | Lee, Kuntack | - |
dc.contributor.nonIdAuthor | Kim, Tae-Hong | - |
dc.contributor.nonIdAuthor | Kwon, Ji-Hwan | - |
dc.contributor.nonIdAuthor | Lee, Ju Hyeok | - |
dc.contributor.nonIdAuthor | Huh, Yoon | - |
dc.contributor.nonIdAuthor | Kang, Sung | - |
dc.contributor.nonIdAuthor | Kim, Hyun You | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | field effect transistors | - |
dc.subject.keywordAuthor | semiconductor processes | - |
dc.subject.keywordAuthor | wet etching | - |
dc.subject.keywordAuthor | liquid-phase TEM | - |
dc.subject.keywordPlus | SINGLE-CRYSTAL SILICON | - |
dc.subject.keywordPlus | TMAH | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | RATES | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.