DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Yeonjoo | ko |
dc.contributor.author | Ahmed, Towfiq | ko |
dc.contributor.author | Wang, Xuejing | ko |
dc.contributor.author | Pettes, Michael T. | ko |
dc.contributor.author | Kim, Yeonhoo | ko |
dc.contributor.author | Park, Jeongwon | ko |
dc.contributor.author | Yang, Woo Seok | ko |
dc.contributor.author | Kang, Kibum | ko |
dc.contributor.author | Hong, Young Joon | ko |
dc.contributor.author | Kwon, Soyeong | ko |
dc.contributor.author | Yoo, Jinkyoung | ko |
dc.date.accessioned | 2024-07-02T11:00:08Z | - |
dc.date.available | 2024-07-02T11:00:08Z | - |
dc.date.created | 2024-06-19 | - |
dc.date.issued | 2024-03 | - |
dc.identifier.citation | APL MATERIALS, v.12, no.3 | - |
dc.identifier.issn | 2166-532X | - |
dc.identifier.uri | http://hdl.handle.net/10203/320119 | - |
dc.description.abstract | Heterogeneous integration of two-dimensional materials and the conventional semiconductor has opened opportunities for next-generation semiconductor devices and their processing. Heterogeneous integration has been studied for economical manufacturing by substrate recycling and novel functionalities by a combination of incommensurate materials. However, utilizing the integration requires controlling locations of the integrated architectures. Here, we show area-selective deposition (ASD) of germanium on the graphene/MoS2 stack. Ge nucleation precisely occurred on the surfaces of the patterned graphene/MoS2 stack via dipole engineering. In this study, the growth temperature of ASD of Ge was significantly lower than that based on precursor desorption on SiO2. The first-principles calculations revealed that Ge deposited by ASD on the graphene/MoS2 stack was not affected by charge transfer. This work provides a viable way to utilize atomically thin materials for next-generation semiconductor devices, which can be applicable for "Beyond Moore" and "More Moore" approaches. | - |
dc.language | English | - |
dc.publisher | AIP Publishing | - |
dc.title | Area-selective deposition of germanium on patterned graphene/monolayer molybdenum disulfide stacks via dipole engineering | - |
dc.type | Article | - |
dc.identifier.wosid | 001180028900005 | - |
dc.identifier.scopusid | 2-s2.0-85186766271 | - |
dc.type.rims | ART | - |
dc.citation.volume | 12 | - |
dc.citation.issue | 3 | - |
dc.citation.publicationname | APL MATERIALS | - |
dc.identifier.doi | 10.1063/5.0187351 | - |
dc.contributor.localauthor | Kang, Kibum | - |
dc.contributor.nonIdAuthor | Lee, Yeonjoo | - |
dc.contributor.nonIdAuthor | Ahmed, Towfiq | - |
dc.contributor.nonIdAuthor | Wang, Xuejing | - |
dc.contributor.nonIdAuthor | Pettes, Michael T. | - |
dc.contributor.nonIdAuthor | Kim, Yeonhoo | - |
dc.contributor.nonIdAuthor | Yang, Woo Seok | - |
dc.contributor.nonIdAuthor | Hong, Young Joon | - |
dc.contributor.nonIdAuthor | Kwon, Soyeong | - |
dc.contributor.nonIdAuthor | Yoo, Jinkyoung | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | ALTERNATING CYCLIC METHOD | - |
dc.subject.keywordPlus | THIN-FILM ALLOYS | - |
dc.subject.keywordPlus | GRAPHENE | - |
dc.subject.keywordPlus | EPITAXY | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | INTEGRATION | - |
dc.subject.keywordPlus | MOS2 | - |
dc.subject.keywordPlus | GATE | - |
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