DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jeon, Sanghun | ko |
dc.contributor.author | Goh, Youngin | ko |
dc.date.accessioned | 2024-05-24T07:01:45Z | - |
dc.date.available | 2024-05-24T07:01:45Z | - |
dc.identifier.uri | http://hdl.handle.net/10203/319502 | - |
dc.description.abstract | Provided is a nonvolatile memory device including a lower electrode on a substrate, an upper electrode on the lower electrode, a tunnel barrier pattern between the lower electrode and the upper electrode, and a fixed charge pattern in contact with the lower electrode and spaced apart from the tunnel barrier pattern with the lower electrode therebetween. The tunnel barrier pattern includes an anti-ferroelectric material. The lower electrode includes a first material. The upper electrode includes a second material. The first material and the second material have different work functions. | - |
dc.title | Nonvolatile memory device and cross point array device including the same | - |
dc.title.alternative | 하프늄옥사이드 기반 반강유전체를 이용한 비휘발성 메모리 소자 | - |
dc.type | Patent | - |
dc.type.rims | PAT | - |
dc.contributor.localauthor | Jeon, Sanghun | - |
dc.contributor.assignee | KAIST | - |
dc.identifier.iprsType | 특허 | - |
dc.identifier.patentApplicationNumber | 17321814 | - |
dc.identifier.patentRegistrationNumber | 11729992 | - |
dc.date.application | 2021-05-17 | - |
dc.date.registration | 2023-08-15 | - |
dc.publisher.country | US | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.