Improvement of Surface Morphology of Aluminum Thin Films Grown by Metallorganic Chemical Vapor Deposition

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dc.contributor.authorAhn, Seong-Deokko
dc.contributor.authorLee, Hyun-Baeko
dc.contributor.authorKang, Sang-Wonko
dc.date.accessioned2008-02-22T09:45:23Z-
dc.date.available2008-02-22T09:45:23Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2000-04-
dc.identifier.citationELECTROCHEMICAL AND SOLID STATE LETTERS, v.3, no.4, pp.186 - 188-
dc.identifier.issn1099-0062-
dc.identifier.urihttp://hdl.handle.net/10203/3163-
dc.description.abstractSurface morphology of aluminum thin films grown by metallorganic chemical vapor deposition has been improved by growing aluminum/titanium nitride multilayers. When the aluminum films were deposited continuously, the reflectance vs. deposition thickness curves showed a maximum reflectance at the completion of coalescence of islands, and then showed a gradual decay with increasing aluminum thickness because of nonuniform grain growth. By inserting 1 nm titanium nitride layer grown by atomic layer deposition on aluminum layer at the maximum reflectance, the reflectance was recovered again to the peak reflectance like a sinusoid waveform. Therefore, without considerable loss of electrical conductivity surface smoothness of aluminum films has been able to be achieved by repeating the aluminum/titanium nitride multilayer depositions. (C) 2000 The Electrochemical Society. S1099-0062(99)10-085-3. All rights reserved.-
dc.description.sponsorshipThe research was supported by the Program for Joint Technology Development Encouraging the Cooperative Linkage among Industries, Universities, and Government Research Institutes and A Collaborative Project for Excellence in System IC Technology.en
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherElectrochemical Soc Inc-
dc.subjectMETALLIZATION-
dc.titleImprovement of Surface Morphology of Aluminum Thin Films Grown by Metallorganic Chemical Vapor Deposition-
dc.typeArticle-
dc.identifier.wosid000086115300008-
dc.identifier.scopusid2-s2.0-0033902417-
dc.type.rimsART-
dc.citation.volume3-
dc.citation.issue4-
dc.citation.beginningpage186-
dc.citation.endingpage188-
dc.citation.publicationnameELECTROCHEMICAL AND SOLID STATE LETTERS-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorKang, Sang-Won-
dc.contributor.nonIdAuthorAhn, Seong-Deok-
dc.contributor.nonIdAuthorLee, Hyun-Bae-
dc.type.journalArticleArticle-
dc.subject.keywordPlusMETALLIZATION-
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