DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Hyeonbin | ko |
dc.contributor.author | Choi, Heenang | ko |
dc.contributor.author | Shin, Sunyoung | ko |
dc.contributor.author | Park, Bo Keun | ko |
dc.contributor.author | Kang, Kibum | ko |
dc.contributor.author | Ryu, Ji Yeon | ko |
dc.contributor.author | Eom, Taeyong | ko |
dc.contributor.author | Chung, Taek-Mo | ko |
dc.date.accessioned | 2023-12-06T01:00:30Z | - |
dc.date.available | 2023-12-06T01:00:30Z | - |
dc.date.created | 2023-12-06 | - |
dc.date.issued | 2023-10 | - |
dc.identifier.citation | DALTON TRANSACTIONS, v.52, no.41, pp.15033 - 15042 | - |
dc.identifier.issn | 1477-9226 | - |
dc.identifier.uri | http://hdl.handle.net/10203/315779 | - |
dc.description.abstract | Novel Sn precursors, Sn(tbip)(2), Sn(tbtp)(2), and Sn(tbta)(2), were synthesized and characterized using various analytical techniques and density functional theory calculations. These precursors contained cyclic amine ligands derived from iminopyrrolidine. X-ray crystallography revealed the formation of monomeric SnL2 with distorted seesaw geometry. Thermogravimetric analysis demonstrated the exceptional volatility of all complexes. Sn(tbtp)(2) showed the lowest residual weight of 2.7% at 265 degrees C. Sn3N4 thin films were successfully synthesized using Sn(tbtp)(2) as the Sn precursor and NH3 plasma. The precursor exhibited ideal characteristics for atomic layer deposition, with a saturated growth per cycle value of 1.9 & Aring; cy(-1) and no need for incubation when the film was deposited at 150-225 degrees C. The indirect optical bandgap of the Sn3N4 film was approximately 1-1.2 eV, as determined through ultraviolet-visible spectroscopy. Therefore, this study suggests that the Sn3N4 thin films prepared using the newly synthesized Sn precursor are suitable for application in thin-film photovoltaic devices. | - |
dc.language | English | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.title | Evaluation of tin nitride (Sn3N4) via atomic layer deposition using novel volatile Sn precursors | - |
dc.type | Article | - |
dc.identifier.wosid | 001081052000001 | - |
dc.identifier.scopusid | 2-s2.0-85174550297 | - |
dc.type.rims | ART | - |
dc.citation.volume | 52 | - |
dc.citation.issue | 41 | - |
dc.citation.beginningpage | 15033 | - |
dc.citation.endingpage | 15042 | - |
dc.citation.publicationname | DALTON TRANSACTIONS | - |
dc.identifier.doi | 10.1039/d3dt02138f | - |
dc.contributor.localauthor | Kang, Kibum | - |
dc.contributor.nonIdAuthor | Park, Hyeonbin | - |
dc.contributor.nonIdAuthor | Choi, Heenang | - |
dc.contributor.nonIdAuthor | Shin, Sunyoung | - |
dc.contributor.nonIdAuthor | Park, Bo Keun | - |
dc.contributor.nonIdAuthor | Ryu, Ji Yeon | - |
dc.contributor.nonIdAuthor | Eom, Taeyong | - |
dc.contributor.nonIdAuthor | Chung, Taek-Mo | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | NEGATIVE ELECTRODE | - |
dc.subject.keywordPlus | VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | SN-119 NMR | - |
dc.subject.keywordPlus | COMPLEXES | - |
dc.subject.keywordPlus | COPPER | - |
dc.subject.keywordPlus | GERMANIUM | - |
dc.subject.keywordPlus | NITROGEN | - |
dc.subject.keywordPlus | ALD | - |
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