DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jeon, Sori | ko |
dc.contributor.author | Lee, Kwang-Heum | ko |
dc.contributor.author | Lee, Seung-Hee | ko |
dc.contributor.author | Cho, Seong-In | ko |
dc.contributor.author | Hwang, Chi-Sun | ko |
dc.contributor.author | Ko, Jong Beom | ko |
dc.contributor.author | Park, Sang-Hee Ko | ko |
dc.date.accessioned | 2023-11-06T03:01:27Z | - |
dc.date.available | 2023-11-06T03:01:27Z | - |
dc.date.created | 2023-10-16 | - |
dc.date.issued | 2023-10 | - |
dc.identifier.citation | JOURNAL OF MATERIALS CHEMISTRY C, v.11, no.41, pp.14177 - 14186 | - |
dc.identifier.issn | 2050-7526 | - |
dc.identifier.uri | http://hdl.handle.net/10203/314275 | - |
dc.description.abstract | Thin-film transistors (TFTs) with a small pitch size are necessary to realize high-resolution displays for virtual reality and augmented reality applications. Particularly, electrodes require low-resistance metals to reduce the resistance-capacitance delay caused by the increased pixel density. However, low-resistance Al can easily oxidize in bottom-contact structures of vertical TFTs owing to the oxidative deposition environment. This study quantitatively analyzed the contact properties of an Al-based metal with Mo and Ti capping layers. The Mo/Al/Mo and Ti/Al/Ti were adopted as the source/drain (S/D) electrodes, and their contact properties were compared. The top-gate bottom-contact device with Mo/Al/Mo S/D exhibited better contact properties, with a 0.02 V turn-on voltage (Von), 3.5 x 107 ON/OFF ratio, and 5.7 k & omega; contact resistance (RSD). By contrast, the device with Ti/Al/Ti S/D exhibited degraded characteristics, with a -0.3 V Von, 0.9 x 107 ON/OFF ratio, and 17 k & omega; RSD owing to metal oxidation. The contact properties were further examined through ultraviolet photoelectron spectroscopy, X-ray photoelectron spectroscopy, and transmission electron microscopy. Vertical TFTs were fabricated using Mo/Al/Mo and Ti/Al/Ti electrodes, and their electrical properties were investigated. The vertical TFT with Mo/Al/Mo electrodes exhibited reasonable performance, with a field-effect mobility of 3.3 cm2 V-1 s-1 and RSD of 15 k & omega;. Conversely, the device with Ti/Al/Ti electrodes yielded degraded transfer characteristics, with a mobility of 0.05 cm2 V-1 s-1 and RSD of 984 k & omega;. The analysis indicates that electrode materials significantly influence the electrical performance of vertical TFTs. Therefore, electrode materials must be carefully selected and structured to realize high-end vertical TFT arrays. Vertical thin-film transistors (TFTs) with low contact resistance are necessary to realize high-resolution displays for virtual reality and augmented reality applications. | - |
dc.language | English | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.title | Contact properties of a low-resistance aluminum-based electrode with metal capping layers in vertical oxide thin-film transistors | - |
dc.type | Article | - |
dc.identifier.wosid | 001086194300001 | - |
dc.identifier.scopusid | 2-s2.0-85174488799 | - |
dc.type.rims | ART | - |
dc.citation.volume | 11 | - |
dc.citation.issue | 41 | - |
dc.citation.beginningpage | 14177 | - |
dc.citation.endingpage | 14186 | - |
dc.citation.publicationname | JOURNAL OF MATERIALS CHEMISTRY C | - |
dc.identifier.doi | 10.1039/d3tc02880 | - |
dc.contributor.localauthor | Park, Sang-Hee Ko | - |
dc.contributor.nonIdAuthor | Jeon, Sori | - |
dc.contributor.nonIdAuthor | Hwang, Chi-Sun | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | GA-ZN-O | - |
dc.subject.keywordPlus | HIGH-MOBILITY | - |
dc.subject.keywordPlus | HYDROGEN | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
dc.subject.keywordPlus | OXYGEN | - |
dc.subject.keywordPlus | TFTS | - |
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