Breathable MOFs Layer on Atomically Grown 2D SnS2 for Stable and Selective Surface Activation

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dc.contributor.authorKim, Gwang Suko
dc.contributor.authorLim, Yunsungko
dc.contributor.authorShin, Joonchulko
dc.contributor.authorYim, Jaegyunko
dc.contributor.authorHur, Sunghoonko
dc.contributor.authorSong, Hyun-Cheolko
dc.contributor.authorBaek, Seung-Hyubko
dc.contributor.authorKim, Seong Keunko
dc.contributor.authorKim, Jihanko
dc.contributor.authorKang, Chong-Yunko
dc.contributor.authorJang, Ji-Sooko
dc.date.accessioned2023-06-29T07:01:34Z-
dc.date.available2023-06-29T07:01:34Z-
dc.date.created2023-05-12-
dc.date.created2023-05-12-
dc.date.issued2023-06-
dc.identifier.citationADVANCED SCIENCE, v.10, no.17-
dc.identifier.issn2198-3844-
dc.identifier.urihttp://hdl.handle.net/10203/310095-
dc.description.abstract2D transition metal dichalcogenides (TMDs) have significant research interests in various novel applications due to their intriguing physicochemical properties. Notably, one of the 2D TMDs, SnS2, has superior chemiresistive sensing properties, including a planar crystal structure, a large surface-to-volume ratio, and a low electronic noise. However, the long-term stability of SnS2 in humid conditions remains a critical shortcoming towards a significant degradation of sensitivity. Herein, it is demonstrated that the subsequent self-assembly of zeolite imidazolate framework (ZIF-8) can be achieved in situ growing on SnS2 nanoflakes as the homogeneous porous materials. ZIF-8 layer on SnS2 allows the selective diffusion of target gas species, while effectively preventing the SnS2 from severe oxidative degradation. Molecular modeling such as molecular dynamic simulation and DFT calculation, further supports the mechanism of sensing stability and selectivity. From the results, the in situ grown ZIF-8 porous membrane on 2D materials corroborates the generalizable strategy for durable and reliable high-performance electronic applications of 2D materials.-
dc.languageEnglish-
dc.publisherWILEY-
dc.titleBreathable MOFs Layer on Atomically Grown 2D SnS2 for Stable and Selective Surface Activation-
dc.typeArticle-
dc.identifier.wosid000972855800001-
dc.identifier.scopusid2-s2.0-85153479957-
dc.type.rimsART-
dc.citation.volume10-
dc.citation.issue17-
dc.citation.publicationnameADVANCED SCIENCE-
dc.identifier.doi10.1002/advs.202301002-
dc.contributor.localauthorKim, Jihan-
dc.contributor.nonIdAuthorKim, Gwang Su-
dc.contributor.nonIdAuthorShin, Joonchul-
dc.contributor.nonIdAuthorYim, Jaegyun-
dc.contributor.nonIdAuthorHur, Sunghoon-
dc.contributor.nonIdAuthorSong, Hyun-Cheol-
dc.contributor.nonIdAuthorBaek, Seung-Hyub-
dc.contributor.nonIdAuthorKim, Seong Keun-
dc.contributor.nonIdAuthorKang, Chong-Yun-
dc.contributor.nonIdAuthorJang, Ji-Soo-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthor2D materials-
dc.subject.keywordAuthorheterostructures-
dc.subject.keywordAuthormembranes-
dc.subject.keywordAuthorpassivation-
dc.subject.keywordPlusMOLECULAR-DYNAMICS-
dc.subject.keywordPlusDIRECT ELECTROCHEMISTRY-
dc.subject.keywordPlusZIF-8-
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CBE-Journal Papers(저널논문)
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