Active-Matrix Driven Flexible Pressure Sensor Array Using Oxide Thin-Film Diode

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dc.contributor.authorYeom, Hye-Inko
dc.contributor.authorKim, Jingyuko
dc.contributor.authorJeon, Guk-Jinko
dc.contributor.authorKim, Joohyeongko
dc.contributor.authorPark, Sang-Hee Koko
dc.date.accessioned2023-06-21T05:01:02Z-
dc.date.available2023-06-21T05:01:02Z-
dc.date.created2023-06-21-
dc.date.created2023-06-21-
dc.date.issued2023-05-
dc.identifier.citationIEEE ELECTRON DEVICE LETTERS, v.44, no.5, pp.801 - 804-
dc.identifier.issn0741-3106-
dc.identifier.urihttp://hdl.handle.net/10203/307393-
dc.description.abstractActive-matrix (AM) flexible pressure sensor is more advantageous than a passive-matrix in terms of power consumption, contrast, and crosstalk problems. Particularly, the AM platform is frequently adopted in wearable electronic systems for accurate data processing because it offers real-time interaction between humans and the external environment. Based on the above, we reported that AM driven flexible pressure sensor array integrated with an oxide thin-film diode and AgNW-coated microstructured polydimethylsiloxane sheet. The pressure sensor exhibited a high sensitivity of 0.6 Pa-1 at a lowpressure regime (<1 kPa) and a short response time of 70 ms, as well as excellent electrical uniformity and mechanical durability. Additionally, upon applying the AM operation, the pressure sensor array accurately identified the selected cell to which the pressure was applied without any sneak current, unlike the passive matrix operation. Consequently, the proposed AM driven flexible pressure sensor shows promising applicability as a building block for advanced wearable platforms.-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.titleActive-Matrix Driven Flexible Pressure Sensor Array Using Oxide Thin-Film Diode-
dc.typeArticle-
dc.identifier.wosid000980442400025-
dc.identifier.scopusid2-s2.0-85151530163-
dc.type.rimsART-
dc.citation.volume44-
dc.citation.issue5-
dc.citation.beginningpage801-
dc.citation.endingpage804-
dc.citation.publicationnameIEEE ELECTRON DEVICE LETTERS-
dc.identifier.doi10.1109/LED.2023.3261065-
dc.contributor.localauthorPark, Sang-Hee Ko-
dc.contributor.nonIdAuthorKim, Jingyu-
dc.contributor.nonIdAuthorKim, Joohyeong-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorSensor arrays-
dc.subject.keywordAuthorSensors-
dc.subject.keywordAuthorPressure sensors-
dc.subject.keywordAuthorSemiconductor diodes-
dc.subject.keywordAuthorResistance-
dc.subject.keywordAuthorElectrodes-
dc.subject.keywordAuthorWearable sensors-
dc.subject.keywordAuthorActive-matrix-
dc.subject.keywordAuthorcontact-type structure-
dc.subject.keywordAuthorflexible pressure sensor-
dc.subject.keywordAuthoroxide thin-film diode-
dc.subject.keywordPlusCOMPOSITE-
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