Soft memristor for soft neuromorphic system소프트 뉴로모픽 시스템을 위한 소프트 멤리스터

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The present disclosure provides a soft memristor for soft neuromorphic system including a substrate, a first electrode layer formed on the substrate, a metal diffusion barrier layer formed on the first electrode layer, a resistive switching material layer formed on the metal diffusion barrier layer, and a second electrode layer formed on the resistive switching material layer.
Assignee
KAIST
Country
US (United States)
Application Date
2020-07-29
Application Number
16941891
Registration Date
2023-01-10
Registration Number
11552267
URI
http://hdl.handle.net/10203/306767
Appears in Collection
EE-Patent(특허)
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