DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, Sung-Yool | ko |
dc.contributor.author | Jang, Byung Chul | ko |
dc.contributor.author | Cha, Jun-Hwe | ko |
dc.date.accessioned | 2023-05-12T07:03:14Z | - |
dc.date.available | 2023-05-12T07:03:14Z | - |
dc.identifier.uri | http://hdl.handle.net/10203/306767 | - |
dc.description.abstract | The present disclosure provides a soft memristor for soft neuromorphic system including a substrate, a first electrode layer formed on the substrate, a metal diffusion barrier layer formed on the first electrode layer, a resistive switching material layer formed on the metal diffusion barrier layer, and a second electrode layer formed on the resistive switching material layer. | - |
dc.title | Soft memristor for soft neuromorphic system | - |
dc.title.alternative | 소프트 뉴로모픽 시스템을 위한 소프트 멤리스터 | - |
dc.type | Patent | - |
dc.type.rims | PAT | - |
dc.contributor.localauthor | Choi, Sung-Yool | - |
dc.contributor.assignee | KAIST | - |
dc.identifier.iprsType | 특허 | - |
dc.identifier.patentApplicationNumber | 16941891 | - |
dc.identifier.patentRegistrationNumber | 11552267 | - |
dc.date.application | 2020-07-29 | - |
dc.date.registration | 2023-01-10 | - |
dc.publisher.country | US | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.