DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Yong Ju | ko |
dc.contributor.author | Kang, Sang-Won | ko |
dc.date.accessioned | 2008-02-18T07:05:53Z | - |
dc.date.available | 2008-02-18T07:05:53Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2002-08 | - |
dc.identifier.citation | ELECTROCHEMICAL AND SOLID STATE LETTERS, v.5, no.10, pp.C91 - C93 | - |
dc.identifier.issn | 1099-0062 | - |
dc.identifier.uri | http://hdl.handle.net/10203/3066 | - |
dc.description.abstract | The atomic layer deposition (ALD) of aluminum films using trimethylaluminum [TMA, Al-2(CH3)(6)] and a hydrogen plasma was examined to improve the surface morphology with good step coverage. The most important role of the hydrogen plasma was to act as a reducing agent for TMA. The film properties were analyzed using field-emission scanning electron microscopy, atomic force microscopy, Rutherford backscattering spectroscopy, and elastic recoil detection-time of flight. The growth rate was saturated at similar to0.15 nm/cycle, and the thickness was proportional to the number of reaction cycles. Repeating this reaction cycle led to controlled layer-by-layer growth. The root-mean-square roughness value of a 7.5 nm thick Al film was 0.195 nm, and ALD films had excellent step coverage on high aspect ratio trenches. (C) 2002 The Electrochemical Society. | - |
dc.description.sponsorship | We acknowledge the support of this research by the Ministry of Science and Technology of Korea, through the National Research Laboratory Project. One of the authors, S. W. Kang, assisted in meeting the publication costs of this article. | en |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | Electrochemical Soc Inc | - |
dc.subject | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject | METALLIZATION | - |
dc.subject | AL | - |
dc.subject | MORPHOLOGY | - |
dc.subject | LPCVD | - |
dc.subject | TIN | - |
dc.title | Atomic Layer Deposition of Aluminum Thin Films Using an Alternating Supply of Trimethylaluminum and a Hydrogen Plasma | - |
dc.type | Article | - |
dc.identifier.wosid | 000177714600009 | - |
dc.identifier.scopusid | 2-s2.0-0036795165 | - |
dc.type.rims | ART | - |
dc.citation.volume | 5 | - |
dc.citation.issue | 10 | - |
dc.citation.beginningpage | C91 | - |
dc.citation.endingpage | C93 | - |
dc.citation.publicationname | ELECTROCHEMICAL AND SOLID STATE LETTERS | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Kang, Sang-Won | - |
dc.contributor.nonIdAuthor | Lee, Yong Ju | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | METALLIZATION | - |
dc.subject.keywordPlus | AL | - |
dc.subject.keywordPlus | MORPHOLOGY | - |
dc.subject.keywordPlus | LPCVD | - |
dc.subject.keywordPlus | TIN | - |
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