매우작은소오스영역을갖는자기정렬된수직이중확산형전력MOSFET의제조방법MANUFACTURING METHOD OF SELF-ALIGNED VERTICAL DOUBLE DIFFUSION TYPE WITH VERY SMALL SOURCE REGION
내용없음
- Assignee
- 한국과학기술원
- Country
- KO (South Korea)
- Application Date
- 1988-03-05
- Application Number
- 10-1988-0002303
- Registration Date
- 1992-07-24
- Registration Number
- 10-0053302-0000
- Appears in Collection
- RIMS Patents
- Files in This Item
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.