매우작은소오스영역을갖는자기정렬된수직이중확산형전력MOSFET의제조방법MANUFACTURING METHOD OF SELF-ALIGNED VERTICAL DOUBLE DIFFUSION TYPE WITH VERY SMALL SOURCE REGION
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 김충기 | ko |
| dc.contributor.author | 고요환 | ko |
| dc.date.accessioned | 2022-11-18T03:06:05Z | - |
| dc.date.available | 2022-11-18T03:06:05Z | - |
| dc.identifier.uri | http://hdl.handle.net/10203/299967 | - |
| dc.description.abstract | 내용없음 | - |
| dc.title | 매우작은소오스영역을갖는자기정렬된수직이중확산형전력MOSFET의제조방법 | - |
| dc.title.alternative | MANUFACTURING METHOD OF SELF-ALIGNED VERTICAL DOUBLE DIFFUSION TYPE WITH VERY SMALL SOURCE REGION | - |
| dc.type | Patent | - |
| dc.type.rims | PAT | - |
| dc.contributor.nonIdAuthor | 고요환 | - |
| dc.contributor.assignee | 한국과학기술원 | - |
| dc.identifier.iprsType | 특허 | - |
| dc.identifier.patentApplicationNumber | 10-1988-0002303 | - |
| dc.identifier.patentRegistrationNumber | 10-0053302-0000 | - |
| dc.date.application | 1988-03-05 | - |
| dc.date.registration | 1992-07-24 | - |
| dc.publisher.country | KO | - |
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