Top-Down Approaches for 10 nm-Scale Nanochannel: Toward Exceptional H2S Detection

Abstract

Metal oxide semiconductors (MOS) have proven to be most powerful sensing materials to detect hydrogen sulfide (H2S), achieving part per billion (ppb) level sensitivity and selectivity. However, there has not been a way of extending this approach to the top-down H2S sensor fabrication process, completely limiting their commercial-level productions. In this study, we developed a top-down lithographic process of a 10 nm-scale SnO2 nanochannel for H2S sensor production. Due to high-resolution (15 nm thickness) and high aspect ratio (>20) structures, the nanochannel exhibited highly sensitive H2S detection performances (Ra/Rg = 116.62, tau res = 31 s at 0.5 ppm) with selectivity (RH2S/Racetone = 23 against 5 ppm acetone). In addition, we demonstrated that the nanochannel could be efficiently sensitized with the p-n heterojunction without any postmodification or an additional process during one-step lithography. As an example, we demonstrated that the H2S sensor performance can be drastically enhanced with the NiO nanoheterojunction (Ra/Rg = 166.2, tau res = 21 s at 0.5 ppm), showing the highest range of sensitivity demonstrated to date for state-of-the-art H2S sensors. These results in total constitute a high-throughput fabrication platform to commercialize the H2S sensor that can accelerate the development time and interface in real-life situations.