A 60-GHz X-type Variable Gain Attenuator

Abstract

A 60-GHz X-type attenuator with complementary bias control is proposed in this study. The proposed circuit was implemented with a 65-nm CMOS process and it occupies 520 μm × 471 μm including bonding pads. The measured peak gain is -6 dB, and 3 -dB bandwidth is over 18.2 GHz from 48.8 to over 67 GHz. In addition, proposed phase invertible attenuator achieves a gain control range of over 37 dB with maximum 14° phase variation in 60-GHz band.