A 60-GHz X-type Variable Gain Attenuator
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Park, Geon Ho | ko |
| dc.contributor.author | Park, Chul Soon | ko |
| dc.date.accessioned | 2022-11-16T03:01:59Z | - |
| dc.date.available | 2022-11-16T03:01:59Z | - |
| dc.date.created | 2022-09-27 | - |
| dc.date.created | 2022-09-27 | - |
| dc.date.issued | 2022-05 | - |
| dc.identifier.citation | 14th Global Symposium on Millimeter-Waves and Terahertz, GSMM 2022, pp.161 - 162 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/299726 | - |
| dc.description.abstract | A 60-GHz X-type attenuator with complementary bias control is proposed in this study. The proposed circuit was implemented with a 65-nm CMOS process and it occupies 520 μm × 471 μm including bonding pads. The measured peak gain is -6 dB, and 3 -dB bandwidth is over 18.2 GHz from 48.8 to over 67 GHz. In addition, proposed phase invertible attenuator achieves a gain control range of over 37 dB with maximum 14° phase variation in 60-GHz band. | - |
| dc.language | English | - |
| dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
| dc.title | A 60-GHz X-type Variable Gain Attenuator | - |
| dc.type | Conference | - |
| dc.identifier.wosid | 000876335200029 | - |
| dc.identifier.scopusid | 2-s2.0-85133590268 | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 161 | - |
| dc.citation.endingpage | 162 | - |
| dc.citation.publicationname | 14th Global Symposium on Millimeter-Waves and Terahertz, GSMM 2022 | - |
| dc.identifier.conferencecountry | KO | - |
| dc.identifier.conferencelocation | Seoul | - |
| dc.identifier.doi | 10.1109/GSMM53818.2022.9792328 | - |
| dc.contributor.localauthor | Park, Chul Soon | - |
| dc.contributor.nonIdAuthor | Park, Geon Ho | - |
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