DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jeong, Giuk | ko |
dc.contributor.author | Ji, Seunghwan | ko |
dc.contributor.author | Choi, Jiwoon | ko |
dc.contributor.author | Jung, Jihun | ko |
dc.contributor.author | Shin, Byungha | ko |
dc.date.accessioned | 2022-11-04T06:01:35Z | - |
dc.date.available | 2022-11-04T06:01:35Z | - |
dc.date.created | 2022-08-29 | - |
dc.date.created | 2022-08-29 | - |
dc.date.issued | 2022-10 | - |
dc.identifier.citation | FARADAY DISCUSSIONS, v.239, pp.263 - 272 | - |
dc.identifier.issn | 1359-6640 | - |
dc.identifier.uri | http://hdl.handle.net/10203/299306 | - |
dc.description.abstract | Sb2Se3, a quasi-1D structured binary chalcogenide, has great potential as a solar cell light absorber owing to its anisotropic carrier transport and benign grain boundaries when the absorber layer is properly aligned along the [hk1] direction perpendicular to the substrate. A growth technique with a high deposition rate, such as vapor transport deposition, is preferred to form an [hk1]-oriented Sb2Se3 film. However, the possible decomposition of Sb2Se3 during cooling after the high-temperature deposition appears to result in Se deficiency, accompanied by the formation of deep-level donor-like defects, such as Se vacancies and Sb on Se antisite defects. Here, we present comprehensive passivation strategies for the rear interface of Sb2Se3 solar cells in a superstrate configuration, namely a post-deposition annealing treatment (PAT) under Se, and the introduction of an electron-blocking layer between Sb2Se3 and the rear metal contact. The PAT effectively passivated the defects associated with Se deficiency and greatly improved the open-circuit voltage and fill factor of Sb2Se3 solar cells. With the further introduction of a poly(N,N-bis(4-butylphenyl)-N,N-bis(phenyl)benzidine) electronblocking layer, the Sb2Se3 solar cell achieved an efficiency of 7.0%. | - |
dc.language | English | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.title | Comprehensive rear surface passivation of superstrate Sb2Se3 solar cells via postdeposition selenium annealing treatments and the application of an electron blocking layer | - |
dc.type | Article | - |
dc.identifier.wosid | 000834895300001 | - |
dc.identifier.scopusid | 2-s2.0-85135514781 | - |
dc.type.rims | ART | - |
dc.citation.volume | 239 | - |
dc.citation.beginningpage | 263 | - |
dc.citation.endingpage | 272 | - |
dc.citation.publicationname | FARADAY DISCUSSIONS | - |
dc.identifier.doi | 10.1039/d1fd00056j | - |
dc.contributor.localauthor | Shin, Byungha | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | DEPOSITION | - |
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